NE3210S01-T1B CEL, NE3210S01-T1B Datasheet

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... GATE WIDTH 160 μm G DESCRIPTION NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems ...

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... TYPICAL NOISE PARAMETERS FREQ. (GHz (Units in mm) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 ORDERING INFORMATION PART NUMBER NE3210S01-T1 NE3210S01-T1B (T = 25°C) A PART NUMBER NE3210S01 PARAMETERS UNITS MIN TYP MAX Drain to Source Voltage V Drain Current mA Input Power dBm ( MIN ...

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TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.5 1.0 1.5 2.0 2.5 0 Drain to Source Voltage, V TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 200 150 100 ...

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... TYPICAL SCATTERING PARAMETERS j50 j100 j25 S j10 22 26.5 GHz S 22 0.1 GHz 100 -j10 -j100 -j25 -j50 NE3210S01 FREQUENCY S 11 GHz MAG ANG 0.10 1.001 -1.14 0.20 1.000 -2.12 0.30 1.000 -3.08 0.40 0.999 -4.18 0.50 0.997 -4.94 0.70 0.995 -6.83 1 ...

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... TYPICAL SCATTERING PARAMETERS j50 j100 j25 j10 S 22 26.5 GHz S 22 0.1 GHz 100 -j10 -j100 -j25 -j50 NE3210S01 FREQUENCY S 11 GHz MAG ANG 0.10 1.000 -1.27 0.20 1.000 -2.34 0.30 1.000 -3.43 0.40 0.999 -4.65 0.50 0.996 -5.48 0.70 0.993 -7 ...

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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 S 22 26.5 GHz S 22 0.1 GHz 100 -j10 -j25 -j50 NE3210S01 FREQUENCY S 11 GHz MAG ANG 0.10 1.001 -1.35 0.20 1.000 -2.51 0.30 1.000 -3.69 0.40 0.998 -4.98 0.50 0.995 -5.88 0.70 0.991 -8.15 1.00 ...

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... NE3210S01 NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.798 RG VTOSC 0 RD ALPHA 8 RS BETA 0.0952 RGMET GAMMA 0.072 KF GAMMADC 0.065 AF Q 2.5 TNOM DELTA 0.5 XTI VBI 0 1e-14 VTOTC N 1 BETATCE RIS 0 FFE RID 0 TAU 4e-12 CDS ...