BFP 405 H6433 Infineon Technologies, BFP 405 H6433 Datasheet - Page 6

• Manufacturer Part Number: BFP 405 H6433
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BFP 405 H6433

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 75 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Other names: BFP405H6433XT

Transition frequency f
f = 2 GHz
V
Power gain G
V
f = parameter in GHz
CE
CE
GHz
dB
= parameter in V
= 3V
26
22
20
18
16
14
12
10
40
32
28
24
20
16
12
8
6
4
8
4
0
0
0
4
4
ma
, G
8
8
ms
12
= ƒ (I
T
= ƒ (I
12
16
C
C
)
)
16
20
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
mA
mA
1.5V
0.5V
I C
I C
4V
3V
2V
1V
22
26
6
Power gain G
V
Power gain G
I
f = parameter in GHz
C
CE
= 5 mA
dB
dB
= 3 V, I
44
36
32
28
24
20
16
12
40
32
28
24
20
16
12
8
4
0
8
4
0
0
0
1
C
1
Gms
|S21|²
2
= 5 mA
ma
ma
, G
, G
3
2
ms
ms
4
, |S
= ƒ (V
3
5
21
6
|
2
CE
4
2009-11-06
Gma
= ƒ (f)
7
)
0.15GHz
0.45GHz
0.9GHz
1.5GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
BFP405
8 GHz
V
f
V CE
10
6