BLF6G27LS-50BN,112 NXP Semiconductors, BLF6G27LS-50BN,112 Datasheet - Page 15

• Manufacturer Part Number: BLF6G27LS-50BN,112
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-50BN,112

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 7
• Forward Transconductance (typ): 5S
• Operating Temp Range: -65C to 200C
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 April 2011
[e-mail]
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
BLF6G27L(S)-50BN
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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