MRF8P26080HSR3 Freescale Semiconductor, MRF8P26080HSR3 Datasheet

RF MOSFET Power HV8 2.6GHZ 80W NI780S-4

MRF8P26080HSR3

Manufacturer Part Number
MRF8P26080HSR3
Description
RF MOSFET Power HV8 2.6GHZ 80W NI780S-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8P26080HSR3

Transistor Polarity
N-Channel
Configuration
Single
Package / Case
NI-780S-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance:
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW
• Typical P
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Designed for W--CDMA and LTE base station applications with frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
V
Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =
7.5 dB @ 0.01% Probability on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Source S--Parameters
Operation
For R5 Tape and Reel option, see p. 13.
Derate above 25°C
DD
calculators by product.
= 28 Volts, I
Frequency
2570 MHz
2595 MHz
2620 MHz
out
@ 3 dB Compression Point ≃ 83 Watts CW
C
DQA
= 25°C
= 300 mA, V
(dB)
15.4
15.2
15.0
G
ps
(1,2)
Rating
GSB
39.1
38.2
36.9
= 1.3 Vdc, P
(%)
η
D
Output PAR
out
out
(dB)
6.8
6.8
6.8
)
= 14 Watts Avg., IQ
ACPR
(dBc)
--33.6
--36.0
--40.0
Symbol
V
V
V
T
CW
T
DSS
T
GS
DD
stg
C
J
CASE 465M- -01, STYLE 1
Document Number: MRF8P26080H
RF
RF
CASE 465H- -02, STYLE 1
MRF8P26080HR3 MRF8P26080HSR3
2500- -2700 MHz, 14 W AVG., 28 V
inA
inB
MRF8P26080HSR3
MRF8P26080HSR3
MRF8P26080HR3
MRF8P26080HR3
/V
/V
Figure 1. Pin Connections
GSA
GSB
LATERAL N- -CHANNEL
NI- -780S- -4
NI- -780- -4
RF POWER MOSFETs
3
4
--65 to +150
W- -CDMA, LTE
--0.5, +65
--6.0, +10
32, +0
Value
(Top View)
1.26
150
225
140
Rev. 0, 12/2010
1
2 RF
RF
outA
outB
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
/V
/V
DSA
DSB
1

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MRF8P26080HSR3 Summary of contents

Page 1

... CASE 465H- -02, STYLE 1 NI- -780S- -4 MRF8P26080HSR3 inA GSA outA inB GSB outB (Top View) Figure 1. Pin Connections Value V --0.5, +65 DSS V --6. --65 to +150 stg T 150 C T 225 J CW 140 1.26 MRF8P26080HR3 MRF8P26080HSR3 /V DSA /V DSB Unit Vdc Vdc Vdc °C °C °C W W/°C 1 ...

Page 2

... Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Symmetrical Doherty configuration. MRF8P26080HR3 MRF8P26080HSR3 2 = 300 mA 1.3 Vdc, 2620 MHz DQA ...

Page 3

... P3dB IMD sym VBW res = 14 W Avg. G out F ∆G ∆P1dB Min Typ Max Unit = 28 Vdc 300 mA, DD DQA — 54 — W — 83 — W MHz — 40 — — 70 — MHz — 0.5 — dB — 0.01 — dB/°C — 0.002 — dB/°C MRF8P26080HR3 MRF8P26080HSR3 3 ...

Page 4

... V Chip Capacitors C15, C16 0.6 pF Chip Capacitors C17, C18 330 μ Electrolytic Capacitors R1 50 Ω Chip Resistor R2, R3 4.75 Ω, 1/4 W Chip Resistors Z1 2500 MHz Band 90° Chip Hybrid Coupler PCB 0.020″, ε MRF8P26080HR3 MRF8P26080HSR3 4 C17 C15 C16 ...

Page 5

... PAR = 7 0.01% Probability on CCDF η 15 20 26.5 W ACPR PARC OUTPUT POWER (WATTS) out Figure 6. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power η --25 --0.5 --30 --0.7 --35 --0.9 ACPR --40 --1.1 --45 --1.3 --50 --1.5 2710 2730 100 -- 1.3 Vdc 60 --15 50 --20 -- --30 30 -- MRF8P26080HR3 MRF8P26080HSR3 5 ...

Page 6

... MHz Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain 2450 MRF8P26080HR3 MRF8P26080HSR3 6 TYPICAL CHARACTERISTICS η 2595 MHz 2620 MHz G ps 2570 MHz 2595 MHz 2620 MHz Vdc 300 mA 1.3 Vdc DD DQA GSB Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 ...

Page 7

... Vdc 300 mA DD DQA (1) Max Eff source load % Ω 46.2 15.3 -- j13.5 6.67 -- j2.44 45.8 17.4 -- j12.6 6.34 -- j2.10 46.4 18.0 -- j10.3 6.16 -- j2.49 Output Device Load Pull Under Tuner Test Z Z source load Maximum Efficiency Tuning MRF8P26080HR3 MRF8P26080HSR3 7.2 9 Ω 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Measurement made on the Class AB, carrier side of the device. MRF8P26080HR3 MRF8P26080HSR3 Vdc 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle DD DQA f = 2595 MHz f = 2595 MHz Actual f = 2620 MHz f = 2570 MHz f = 2620 MHz INPUT POWER (dBm) in Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P26080HR3 MRF8P26080HSR3 9 ...

Page 10

... MRF8P26080HR3 MRF8P26080HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8P26080HR3 MRF8P26080HSR3 11 ...

Page 12

... MRF8P26080HR3 MRF8P26080HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... MRF8P26080H and MRF8P26080HS in the R3 tape and reel option. The following table summarizes revisions to this document. Revision Date 0 Dec. 2010 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor R5 TAPE AND REEL OPTION REVISION HISTORY Description MRF8P26080HR3 MRF8P26080HSR3 13 ...

Page 14

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8P26080HR3 MRF8P26080HSR3 Document Number: MRF8P26080H Rev. 0, 12/2010 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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