IXTY05N100 IXYS, IXTY05N100 Datasheet

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IXTY05N100

Manufacturer Part Number
IXTY05N100
Description
Various MOSFETs Legacy MOS
Manufacturer
IXYS
Datasheet

Specifications of IXTY05N100

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
0.75
Rds(on), Max, Tj=25°c, (?)
17
Ciss, Typ, (pf)
260
Qg, Typ, (nc)
7.8
Trr, Typ, (ns)
710
Pd, (w)
40
Rthjc, Max, (k/w)
3.1
Package Style
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
Weight
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
DSS
DGR
GSS
GSM
AS
D
J
JM
stg
L
SOLD
C
GS(th)
DS(on)
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
TO-251
TO-252
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 250μA
= 250μA
≤ V
= 375mA, Note 1
DS
DSS
= 0V
, T
J
GS
=150°C
= 1MΩ
T
J
JM
= 125°C
IXTU05N100
IXTY05N100
-55 ... +150
-55 ... +150
1000
2.5
Maximum Ratings
Characteristic Values
1.13 / 10
Min.
1000
1000
0.40
0.35
750
100
150
300
260
±30
±40
40
Typ.
3
1
3
±100 nA
Nm/lb.in.
500 μA
Max.
4.5
25 μA
17
V/ns
mA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
Ω
V
g
g
V
I
R
TO-251
TO-252
G = Gate
S = Source
Features
Applications
Advantages
D25
International standard packages
Fast switching times
Avalanche Rated
Rugged polysilicon gate cell structure
Extended FBSOA
DS(on)
DSS
Switch-mode and resonant-mode
Flyback inverters
DC choppers
High power density
Space savings
power supplies
G
D
S
≤ ≤ ≤ ≤ ≤
=
=
G
S
D
TAB = Drain
17Ω Ω Ω Ω Ω
1000V
750mA
= Drain
DS100102(01/09)
D (TAB)
D (TAB)

Related parts for IXTY05N100

IXTY05N100 Summary of contents

Page 1

... ± 30V GSS DSS DS DSS 10V 375mA, Note 1 DS(on © 2009 IXYS CORPORATION, All rights reserved IXTU05N100 IXTY05N100 Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ±40 750 100 =150° -55 ... +150 150 -55 ... +150 300 260 1. 0.40 0.35 Characteristic Values Min. Typ. 1000 2 ...

Page 2

... DSS 7 1.4 DSS D 4.1 Characteristic Values Min. Typ. JM 710 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTU05N100 IXTY05N100 TO-251 (IXTU) Outline Max Gate 3. Source nC Dim. Millimeter nC Min. A 2.19 3.1 °C/W A1 0.89 110 °C/W b 0. ...

Page 3

... I - Amperes D Fig. 6. Input Admittance 1.1 1.0 0.9 0.8 0.7 0.6 0 125ºC J 25ºC 0.4 - 40ºC 0.3 0.2 0.1 0.0 3.0 3.5 4.0 4.5 5 Volts GS IXTU05N100 IXTY05N100 = 10V 5. 375mA 25ºC J 1.2 1.4 1.6 5.5 6.0 6.5 ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 10 Pulse Width - millisecond Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125ºC J 0.4 0.45 0.5 0.55 0.6 0.65 0 Volts SD Fig. 10. Capacitance MHz Volts DS 100 IXTU05N100 IXTY05N100 T = 25ºC J 0.75 0.8 0.85 0.9 C iss C oss C rss 1000 IXYS REF: T_05N100M(1TM)7-29-08 ...

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