TGF2023-10 TriQuint, TGF2023-10 Datasheet
TGF2023-10
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TGF2023-10 Summary of contents
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... Defense & Aerospace • Broadband Wireless Product Description The TriQuint TGF2023- discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-10 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions ...
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... Table IV. Recommended Operating Conditions Symbol Vd Drain Voltage Idq Drain Current Id_Drive Drain Current under RF Drive Vg Gate Voltage TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Table I Table II Parameter Apr 2011 © Rev D TGF2023-10 Value Notes - dBm 2/ 200 °C Value ...
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... GHz 6 GHz 10 GHz 79.3 81.9 61.5 0.524 0.348 0.426 153 171 72.1 0.426 0.372 0.414 Apr 2011 © Rev D TGF2023-10 14 GHz UNITS 44.3 dBm 38 % 5.6 dB 44.3 dBm GHz UNITS 49.9 Ω·mm 0.432 pF/mm 53.1 Ω·mm ...
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... Test Conditions Tbaseplate = 70 º Tbaseplate = 70 º 2.98 A Pout = 46.7 dBm Pd = 37.6 W Tbaseplate = 70 ºC 30 Seconds Apr 2011 © Rev D TGF2023-10 Value Notes Tchannel = 200 º 1.5E+6 Hrs θjc = 2.0 (ºC/W) Tchannel = 126 º 6.4E+8 Hrs θjc = 2.0 (ºC/W) Tchannel = 145 º 1.1E+8 Hrs 320 º ...
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... Median Lifetime vs Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 © Rev D TGF2023-10 5 ...
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... Rdg Cdg + Rds Cds Vd=28V Idq=125mA Rg 0.78 Rs 0.13 Rd 1.28 gm 0.270 1.79 Ri 0.26 0.308 123.6 0.064 2.78 Ls 0.0058 Lg -0.013 Ld 0.018 8900 1730000 Apr 2011 © Rev D TGF2023- Drain Unit GaN cell (UGC) Reference Plane UNITS Ω Ω Ω Ω pF Ω Ω Ω 6 ...
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... Complete 10mm GaN HEMT Linear Model Includes 8 UGC, 9 vias, and 16 bonding pads Gate Pads TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Drain Pads .s16p file Rp, Cp Apr 2011 © Rev D TGF2023-10 Γ_load 7 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Drawing Bond Pad # Bond Pad #9 Vd Apr 2011 © Rev D TGF2023-10 0.154 x 0.115 0.154 x 2.050 8 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Notes Ordering Information Part ECCN 3A001.b.3.b Apr 2011 © Rev D TGF2023-10 Package Style GaN on SiC Die 9 ...