MCR12D ON Semiconductor, MCR12D Datasheet - Page 3

• Manufacturer Part Number: MCR12D
• Description: SCRs 400V 12A
• Manufacturer: ON Semiconductor

Specifications of MCR12D

• Breakover Current Ibo Max: 100 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 2.2 V
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 20 mA
• Holding Current (ih Max): 40 mA
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
100
0.1
10
10
1
−40
1
0.5
V
MAXIMUM @ T
−25
T
Figure 3. Typical On−State Characteristics
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 5. Typical Holding Current versus
−10
T
1.0
J
, JUNCTION TEMPERATURE (°C)
5
Junction Temperature
J
= 25°C
20
1.5
35
50
100
MAXIMUM @ T
10
1
2.0
−40
65
−25
Figure 7. Typical Latching Current versus
MCR12D, MCR12M, MCR12N
80
−10
2.5
T
95
J
J
, JUNCTION TEMPERATURE (°C)
= 125°C
110
5
http://onsemi.com
Junction Temperature
20
125
3.0
35
3
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
18
16
14
12
10
8
6
4
2
0
−40
−40
65
Figure 4. Typical Gate Trigger Current versus
Figure 6. Typical Gate Trigger Voltage versus
−25
−25
80
−10
−10
T
T
95
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
5
Junction Temperature
5
110
Junction Temperature
20
20
125
35
35
50
50
65
65
80
80
95
95
110
110
125
125