2N6508 ON Semiconductor, 2N6508 Datasheet - Page 3
![SCRs 600V 25A](/photos/26/98/269844/to220_sml.jpg)
2N6508
Manufacturer Part Number
2N6508
Description
SCRs 600V 25A
Manufacturer
ON Semiconductor
Datasheet
1.2N6505T.pdf
(7 pages)
Specifications of 2N6508
Breakover Current Ibo Max
250 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
1.8 V
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
30 mA
Holding Current (ih Max)
40 mA
Mounting Style
Through Hole
Package / Case
TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N6508
Manufacturer:
ON Semiconductor
Quantity:
310
Company:
Part Number:
2N6508G
Manufacturer:
TOSHIBA
Quantity:
30 000
Symbol
V
I
V
I
V
I
110
DRM
RRM
H
13
12
10
90
80
DRM
RRM
TM
0
0
0
0
Figure 1. Average Current Derating
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
I
T(AV)
4.0
= 30
, ON‐STATE FORWARD CURRENT (AMPS)
8.0
60
90
Voltage Current Characteristic of SCR
12
= CONDUCTION ANGLE
180
16
http://onsemi.com
2N6504 Series
dc
I
Reverse Avalanche Region
Anode -
RRM
20
Reverse Blocking Region
3
at V
RRM
8.0
32
24
16
(off state)
0
0
Figure 2. Maximum On-State Power Dissipation
= CONDUCTION ANGLE
I
T(AV)
on state
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
4.0
+ Current
= 30
Forward Blocking Region
I
H
8.0
V
60
TM
(off state)
90
I
DRM
12
Anode +
at V
DRM
T
J
+ Voltage
= 125 C
16
180
dc
20