MCR100-008 ON Semiconductor, MCR100-008 Datasheet - Page 3

• Manufacturer Part Number: MCR100-008
• Description: SCRs 600V 800mA
• Manufacturer: ON Semiconductor

Specifications of MCR100-008

• Breakover Current Ibo Max: 10 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
90
80
70
60
50
40
30
20
10
Symbol
V
I
V
I
V
I
DRM
RRM
H
−40
DRM
RRM
TM
Figure 1. Typical Gate Trigger Current versus
−25
−10
T
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
J
, JUNCTION TEMPERATURE (°C)
5
Junction Temperature
20
35
50
Voltage Current Characteristic of SCR
65
80
http://onsemi.com
95
110
I
Reverse Avalanche Region
RRM
Anode −
3
Reverse Blocking Region
at V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40
RRM
(off state)
−25
Figure 2. Typical Gate Trigger Voltage versus
on state
−10
T
J
, JUNCTION TEMPERATURE (°C)
+ Current
5
Junction Temperature
20
Forward Blocking Region
I
H
35
V
TM
(off state)
50
I
DRM
65
Anode +
at V
DRM
80
+ Voltage
95
110