BTA41-400B STMicroelectronics, BTA41-400B Datasheet - Page 4

• Manufacturer Part Number: BTA41-400B
• Description: Triacs 40 Amp 400 Volt
• Manufacturer: STMicroelectronics

Specifications of BTA41-400B

• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Breakover Current Ibo Max: 315 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 80 mA
• Forward Voltage Drop: 1.8 V @ 60 A
• Mounting Style: Through Hole
• Package / Case: TO-3P
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
Figure 9.
4/9
Figure 5.
Figure 7.
2.5
2.0
1.5
1.0
0.5
0.0
450
400
350
300
250
200
150
100
50
0
-40
I
1
GT H L
I
TSM
I
,I ,I [T ] /
H
& I
-20
(A)
L
Relative variation of critical rate of decrease of main current versus (dV/dt)c
Repetitive
I
Surge peak on-state current versus
number of cycles
T =70°C
Relative variation of gate trigger,
holding and latching current versus
junction temperature
GT
j
C
0
I
GT H L
Non repetitive
T initial=25°C
,I ,I [T =25°C]
j
20
10
Number of cycles
j
Typical values
40
T (°C)
j
60
6
5
4
3
2
1
0
(dI/dt)c [T ] /
0
100
80
100
j
25
t=20ms
(dI/dt)c [T s
One cycle
120
Doc ID 7469 Rev 8
1000
140
j
50
pecified]
T (°C)
j
Figure 6.
Figure 8.
10000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
75
1000
100
0.1
(dI/dt)c [(dV/dt)c] / specified (dI/dt)c
0.01
I
TSM
dI/dt limitation:
50A/µs
(A), I t (A s)
100
Non-repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
2
2
1.0
0.10
125
(dV/dt)c (V/µs)
t (ms)
p
BTA40, BTA41, BTB41
10.0
1.00
I
TSM
T initial=25 °C
Pulse width tp < 10 ms
j
2
t
I t
2
10.00
100.0