BTA416Y-800B NXP Semiconductors, BTA416Y-800B Datasheet - Page 5

• Manufacturer Part Number: BTA416Y-800B
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-800B

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA416Y-800B,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BTA416Y-800B
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
I
(A)
TSM
10
10
10
10
10
10
10
3
2
1
1
2
3
10
10
Non-repetitive peak on-state current as a function of pulse duration; maximum values
Transient thermal impedance from junction to mounting base as a function of pulse duration
-5
5
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
(1)
10
4
10
-4
All information provided in this document is subject to legal disclaimers.
10
3
Conditions
full cycle; see
in free air
Rev. 3 — 24 June 2011
10
10
-3
2
Figure 6
10
1
10
-2
BTA416Y-800B
Min
-
-
I
T
1
P
T
j(init)
Typ
-
60
= 25 C max
t
t
p
p
t
p
© NXP B.V. 2011. All rights reserved.
(s)
t
p
3Q Hi-Com Triac
(s)
003aab818
003aab821
I
TSM
Max
1.9
-
t
t
10
10
-1
Unit
K/W
K/W
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