BT136B-600E /T3 NXP Semiconductors, BT136B-600E /T3 Datasheet - Page 5

• Manufacturer Part Number: BT136B-600E /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT136B-600E /T3

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT136B-600E,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BT136B-600E
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
I
TSM
(A)
10
10
10
10
10
10
1
3
2
1
2
10
10
t
(1) dI
(2) T2- G+ quadrant limit
Non-repetitive peak on-state current as a function of pulse width; maximum values
Transient thermal impedance from junction to mounting base as a function of pulse width
p
5
5
Thermal characteristics
≤ 20 ms
T
/dt limit
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
(2)
10
4
(1)
10
4
unidirectional
All information provided in this document is subject to legal disclaimers.
10
Conditions
half cycle; see
full cycle; see
PCB (FR4) mounted; minimum pad
sizes
3
Rev. 03 — 1 April 2011
Figure 6
Figure 6
10
10
3
2
bidirectional
10
1
10
2
Min
-
-
-
BT136B-600E
I
T
1
P
T
j(init)
t
p
Typ
-
-
55
(s)
= 25 C max
t
p
t
p
t p
© NXP B.V. 2011. All rights reserved.
(s)
003aae829
003aae836
I
TSM
Max
3.7
3
-
t
t
10
10
4Q Triac
1
Unit
K/W
K/W
K/W
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