BT137X-600D NXP Semiconductors, BT137X-600D Datasheet
BT137X-600D
Specifications of BT137X-600D
Available stocks
Related parts for BT137X-600D
BT137X-600D Summary of contents
Page 1
... Non-repetitive peak on-state current TSM PIN CONFIGURATION case CONDITIONS full sine wave ˚C hs full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT137X-600D MAX. UNIT 600 SYMBOL MIN. MAX. UNIT 1 - 600 ...
Page 2
... D GT T2+ G+ T2+ G- T2 400 0 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 0 DRM(max / Product specification BT137X-600D MIN. TYP. MAX. UNIT - - 2500 MIN. TYP. MAX. UNIT - - 4.5 K 6.5 K K/W MIN. TYP. MAX. UNIT - 1.2 ...
Page 3
... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 1000 - Product specification BT137X-600D BT137X 100 Ths / C versus heatsink temperature T hs 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 73˚C. hs VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...
Page 4
... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT137X-600D max typ 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-hs pulse width 100 /dt versus junction temperature T ...
Page 5
... Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 5 Product specification BT137X-600D 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.000 1.0 (2x) 0.9 0.7 ...
Page 6
... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT137X-600D Rev 1.000 ...