BT136S-600E /T3 NXP Semiconductors, BT136S-600E /T3 Datasheet - Page 6
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BT136S-600E /T3
Manufacturer Part Number
BT136S-600E /T3
Description
Triacs TAPE13 TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT136S-600E_T3.pdf
(15 pages)
Specifications of BT136S-600E /T3
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
27 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.7 V @ 5 A
Mounting Style
SMD/SMT
Package / Case
SOT-428
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT136S-600E,118
NXP Semiconductors
5. Thermal characteristics
Table 5.
BT136S-600E
Product data sheet
Symbol
R
R
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
1
1
2
10
Transient thermal impedance from junction to mounting base as a function of pulse width
5
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
10
4
unidirectional
All information provided in this document is subject to legal disclaimers.
10
3
Conditions
half cycle; see
full cycle; see
in free air; printed circuit board (FR4)
mounted; standard footprint, single-sided
copper, tin-plated
Rev. 03 — 31 March 2011
10
Figure 6
Figure 6
2
bidirectional
10
1
Min
-
-
-
BT136S-600E
1
P
Typ
-
-
75
t
p
t p
© NXP B.V. 2011. All rights reserved.
(s)
003aae836
Max
3.7
3
-
t
10
4Q Triac
Unit
K/W
K/W
K/W
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