NSR30CM3T5G ON Semiconductor, NSR30CM3T5G Datasheet

DIODE SCHOTTKY DUAL 30V SOT-723

NSR30CM3T5G

Manufacturer Part Number
NSR30CM3T5G
Description
DIODE SCHOTTKY DUAL 30V SOT-723
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSR30CM3T5G

Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
5ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-723
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Dual Common Cathode
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NSR30CM3T5G
NSR30CM3T5GOSTR

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NSR30CM3T5G
Dual Common Cathode
Schottky Barrier Diodes
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 board with minimum mounting pad.
© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 3
MAXIMUM RATINGS
Reverse Voltage
Forward Power Dissipation
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction−to−Ambient (Note 1)
These Schottky barrier diodes are designed for high speed switching
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
This is a Pb−Free Device
@ T
Derate above 25°C
A
Rating
= 25°C
(T
J
= 125°C unless otherwise noted)
Preferred Device
Symbol
R
T
V
P
T
I
qJA
stg
F
R
F
J
F
= 10 mA
−55 to +150
200 Max
125 Max
Value
190
525
1.9
30
1
mW/°C
°C/W
Volts
Unit
mW
mA
°C
°C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
NSR30CM3T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Device
DUAL COMMON CATHODE
1
SCHOTTKY BARRIER
ANODE
ORDERING INFORMATION
5C = Specific Device Code
D
1
2
http://onsemi.com
http://onsemi.com
= Date Code
CASE 631AA
DIODES
(Pb−Free)
CATHODE
SOT−723
SOT−723
STYLE 3
Package
30 V
3
Publication Order Number:
8000/Tape & Reel
NSR30CM3T5G/D
ANODE
MARKING
DIAGRAM
1
Shipping
2
5C D

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NSR30CM3T5G Summary of contents

Page 1

... D CASE 631AA 2 STYLE Specific Device Code D = Date Code ORDERING INFORMATION Device Package Shipping SOT−723 8000/Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSR30CM3T5G/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mA) F Forward Voltage (I = ...

Page 3

W + 100 mH F 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR Notes 2.0 kW variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...

Page 4

... BSC 0.016 BSC H 1.15 1.20 1.25 0.045 0.047 0.049 E L 0.15 0.20 0.25 0.0059 0.0079 0.0098 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSR30CM3T5G/D ...

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