BT151X-650R NXP Semiconductors, BT151X-650R Datasheet - Page 7

• Manufacturer Part Number: BT151X-650R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151X-650R

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151X-650R,127

Philips Semiconductors
8. Package information
9397 750 13162
Product data sheet
Fig 9. On-state current characteristics.
Fig 11. Normalized holding current as a function of
I
H
I
H
(25 C)
(1) T
(2) T
(3) T
(A)
(T
I
T
j
30
20
10
)
0
3
2
1
0
V
R
junction temperature.
0
50
j
j
j
O
S
= 125 C; typical values.
= 125 C; maximum values.
= 25 C; maximum values.
= 0.0304 .
= 1.06 V.
0.5
0
Epoxy meets requirements of UL94 V-0 at
50
1
(1)
(2)
100
1.5
(3)
001aaa959
001aaa950
T
V
j
T
( C)
(V)
150
2
Rev. 04 — 9 June 2004
Fig 10. Normalized latching current as a function of
Fig 12. Critical rate of rise of off-state voltage as a
I
L
I
dV
(25 C)
(V/ s)
L
(1) R
(2) Gate open circuit.
(T
D
10
10
10
/dt
j
10
)
3
2
1
0
4
3
2
junction temperature.
function of junction temperature; minimum
values.
1
50
0
GK
8
inch.
= 100 .
(2)
(1)
0
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
50
100
100
T
j
001aaa951
T
001aaa949
( C)
j
( C)
150
150
Thyristors
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