BT134-600D NXP Semiconductors, BT134-600D Datasheet - Page 2

• Manufacturer Part Number: BT134-600D
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT134-600D

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-82
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT134-600D,127

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
October 1997
Triacs
logic level
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
D
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; R
I
dI
T
TM
D
D
D
D
D
D
DM
G
= 5 A
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 6 A; V
= 67% V
DRM(max)
D
T
GT
GT
T
T
DRM(max)
= V
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= 0.1 A; T
j
2
DRM(max)
= 125 ˚C
; T
j
; I
= 125 ˚C;
j
G
GK
= 125 ˚C
= 0.1 A;
= 1 k
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
BT134 series D
100
2.0
2.5
2.5
5.0
1.6
4.5
1.2
2.2
1.2
1.4
0.7
0.4
0.1
5
2
-
-
Product specification
MAX.
MAX.
MAX.
1.70
3.0
3.7
1.5
0.5
10
10
15
10
15
10
5
5
5
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s