BTA208S-800E /T3 NXP Semiconductors, BTA208S-800E /T3 Datasheet - Page 9

• Manufacturer Part Number: BTA208S-800E /T3
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA208S-800E /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 72 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA208S-800E,118

NXP Semiconductors
BTA208S-800E
Product data sheet
Fig 11. Normalized gate trigger voltage as a function of
V
GT(25 C)
V
GT
1.6
1.2
0.8
0.4
junction temperature
50
0
50
100
All information provided in this document is subject to legal disclaimers.
001aab101
T
j
( C)
150
Rev. 05 — 14 April 2011
Fig 12. Rate of change of commutating current as a
dl
(A/ms)
com
10
10
/dt
10
1
3
2
20
function of junction temperature; minimum
values
60
BTA208S-800E
100
© NXP B.V. 2011. All rights reserved.
T
3Q Hi-Com Triac
j
003aag069
(°C)
140
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