BTA312-800B NXP Semiconductors, BTA312-800B Datasheet - Page 7
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BTA312-800B
Manufacturer Part Number
BTA312-800B
Description
Triacs RAIL-THYR AND TRIACS
Manufacturer
NXP Semiconductors
Datasheet
1.BTA312-600B127.pdf
(12 pages)
Specifications of BTA312-800B
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.6 V @ 15 A
Mounting Style
SMD/SMT
Package / Case
SOT-78
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA312-800B,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTA312-800B
Manufacturer:
VISHAY
Quantity:
9 000
Part Number:
BTA312-800B
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
7. Dynamic characteristics
Table 6.
BTA312_SER_B_C_1
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7. Normalized gate trigger voltage as a function of
com
V
D
GT(25 C)
/dt
V
/dt rate of change
GT
1.6
1.2
0.8
0.4
junction temperature
rate of rise of
off-state
voltage
of
commutating
current
gate-controlled
turn-on time
50
Dynamic characteristics
0
Conditions
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit
I
dI
TM
DM
DM
G
/dt = 5 A/ s
50
= 20 A; V
= 0.67
= 400 V; T
100
D
V
= V
DRM(max)
j
= 125 C; I
001aab101
T
j
DRM(max)
( C)
150
; T
Rev. 01 — 13 March 2007
j
; I
= 125 C;
T(RMS)
G
= 0.1 A;
= 12 A;
Fig 8. Normalized gate trigger current as a function of
I
GT(25 C)
I
(1) T2 G
(2) T2+ G
(3) T2+ G+
GT
BTA312 series B and C
12 A Three-quadrant triacs high commutation
3
2
1
0
junction temperature
50
1000
30
-
(1)
(2)
(3)
Min
BTA312-600B
BTA312-800B
Typ
2000
-
2
0
-
-
-
Max
50
500
20
-
Min
BTA312-600C
BTA312-800C
100
© NXP B.V. 2007. All rights reserved.
Typ
-
-
2
001aac669
T
j
( C)
-
-
-
Max
150
Unit
V/ s
A/ms
7 of 12
s