BT136S-600 /T3 NXP Semiconductors, BT136S-600 /T3 Datasheet - Page 4

• Manufacturer Part Number: BT136S-600 /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT136S-600 /T3

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT136S-600,118

NXP Semiconductors
BT136S-600
Product data sheet
Fig 3.
Fig 4.
I
P
(W)
TSM
(A)
tot
30
25
20
15
10
8
6
4
2
0
5
0
values
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
0
1
conduction
(degrees)
angle
120
180
30
60
90
factor
form
1.57
2.8
2.2
1.9
a
4
1
10
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 March 2011
2
10
2
3
10
3
4
120
number of cycles
90
60
30
= 180
I
BT136S-600
T
T
j(init)
I
T(RMS)
1/f
= 25 C max
© NXP B.V. 2011. All rights reserved.
(A)
003aae827
003aae831
I
TSM
t
10
5
4
4Q Triac
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