BTA316X-600C NXP Semiconductors, BTA316X-600C Datasheet - Page 7

• Manufacturer Part Number: BTA316X-600C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA316X-600C

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA316X-600C,127

NXP Semiconductors
8. Dynamic characteristics
Table 7.
BTA316X_SER_B_C_E_1
Product data sheet
Symbol Parameter
dV
dI
t
gt
com
D
/dt
/dt rate of change
rate of rise of
off-state
voltage
of
commutating
current
gate-controlled
turn-on time
Dynamic characteristics
Conditions
V
V
T
exponential
waveform; gate open
circuit
V
T
I
without snubber;
gate open circuit
V
T
I
dV/dt = 10 V/ s;
gate open circuit
V
T
I
dV/dt = 1 V/ s; gate
open circuit
I
V
I
dI
T(RMS)
T(RMS)
T(RMS)
TM
G
j
j
j
j
DM
DRM(max)
DM
DM
DM
D
G
= 125 C;
= 125 C;
= 125 C;
= 125 C;
= 0.1 A;
/dt = 5 A/ s
= V
= 20 A;
= 0.67
= 400 V;
= 400 V;
= 400 V;
DRM(max)
= 16 A;
= 16 A;
= 16 A;
;
;
Rev. 01 — 11 April 2007
Min
1000
20
-
-
-
BTA316X-600B
BTA316X-800B
Typ
-
-
-
-
2
BTA316X series B, C and E
Max Min
-
-
-
-
-
16 A Three-quadrant triacs high commutation
500
15
-
-
-
BTA316X-600C
BTA316X-800C
Typ
-
-
-
-
2
Max Min
-
-
-
-
-
60
5
8
12
-
BTA316X-600E
BTA316X-800E
© NXP B.V. 2007. All rights reserved.
Typ
-
-
-
-
2
Max
-
-
-
-
-
Unit
V/ s
A/ms
A/ms
A/ms
7 of 13
s