BTA312X-600B NXP Semiconductors, BTA312X-600B Datasheet - Page 7

• Manufacturer Part Number: BTA312X-600B
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA312X-600B

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.6 V @ 15 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA312X-600B,127

NXP Semiconductors
8. Dynamic characteristics
Table 7.
BTA312X_SER_B_C_2
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7. Normalized gate trigger voltage as a function of
com
V
D
GT(25 C)
/dt
V
/dt rate of change
GT
1.6
1.2
0.8
0.4
junction temperature
rate of rise of
off-state
voltage
of
commutating
current
gate-controlled
turn-on time
50
Dynamic characteristics
0
Conditions
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit
I
dI
TM
DM
DM
G
/dt = 5 A/ s
50
= 20 A; V
= 0.67
= 400 V; T
100
D
V
= V
DRM(max)
j
= 125 C; I
001aab101
T
j
DRM(max)
( C)
Rev. 02 — 17 December 2007
150
; T
j
; I
= 125 C;
T(RMS)
G
= 0.1 A;
= 12 A;
Fig 8. Normalized gate trigger current as a function of
I
GT(25 C)
BTA312X series B and C
I
(1) T2 G
(2) T2+ G
(3) T2+ G+
GT
12 A Three-quadrant triacs high commutation
3
2
1
0
junction temperature
50
1000
(1)
(2)
(3)
Min
30
BTA312X-600B
BTA312X-800B
-
2000
0
Typ
2
-
Max
-
-
-
50
Min
500
20
BTA312X-600C
BTA312X-800C
-
100
© NXP B.V. 2007. All rights reserved.
Typ
001aac669
T
2
-
-
j
( C)
Max
150
-
-
-
Unit
V/ s
A/ms
7 of 12
s