BTA216-600B NXP Semiconductors, BTA216-600B Datasheet - Page 4

• Manufacturer Part Number: BTA216-600B
• Description: Triacs RAIL 3Q TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA216-600B

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA216-600B,127

Philips Semiconductors
October 1997
Three quadrant triacs
high commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
IGT(25 C)
(T
3
2
1
0
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BTA216
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G-
T2- G-
100
T2+ G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of change of commutating
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
0.001
50
40
30
20
10
current dI
100
0.01
0
10
0.1
0
10
10us
1
IT / A
1
20
Vo = 1.195 V
Rs = 0.018 Ohms
Tj = 125 C
dIcom/dt (A/ms)
Zth j-mb (K/W)
Tj = 25 C
0.5
0.1ms
40
com
/dt versus junction temperature.
pulse width t
1ms
1
60
unidirectional
tp / s
typ
BTA216
BT139
VT / V
10ms
Tj / C
BT139
1.5
80
BTA216 series B
P
D
bidirectional
p
.
0.1s
100
Product specification
2
max
t
p
120
2.5
1s
th j-mb
t
Rev 1.200
, versus
10s
140
3