MMT05B350T3 ON Semiconductor, MMT05B350T3 Datasheet
MMT05B350T3
Specifications of MMT05B350T3
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MMT05B350T3 Summary of contents
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... High Surge Current Capability 1000 msec, for Controlled Temperature Environments • The MMT05B350T3 is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 and K.21, IEC 950, UL 1459 and 1950 and FCC Part 68 • Bidirectional Protection in a Single Device • ...
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... Off State Blocking Voltage Breakdown Voltage BR V Breakover Voltage BO I Breakover Current BO I Holding Current State Voltage TM MMT05B350T3 (T = 25°C unless otherwise noted 1.0 kW) S (Note 3) (+65°C) = 25°C) J Voltage Current Characteristic of TSPD (Bidirectional Device) http://onsemi.com 2 Symbol Max T − 125 ...
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... Peak 100 Value Half Value TIME (ms) Figure 5. Exponential Decay Pulse Waveform MMT05B350T3 400 390 380 370 360 350 340 330 320 80 100 120 140 −60 −40 −20 Figure 2. Typical Breakdown Voltage versus 600 ...
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... MMT05B350T3 TIP GND OUTSIDE PLANT RING PPTC* TIP GND OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE GND PLANT RING HEAT COIL http://onsemi.com TELECOM EQUIPMENT TELECOM EQUIPMENT TELECOM EQUIPMENT 4 ...
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... H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30 K 0.030 0.050 0.76 1.27 P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMT05B350T3/D ...