TISPPBL1DR Bourns Inc., TISPPBL1DR Datasheet - Page 8

• Manufacturer Part Number: TISPPBL1DR
• Description: Sidacs SURGE SUP 8-SOP
• Manufacturer: Bourns Inc.

Specifications of TISPPBL1DR

• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TISPPBL1D, TISPPBL1P, TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
operation of gated protectors
8
99·999
99·99
0·001
99·9
0·01
0·1
99
90
70
50
30
10
V
gate reference voltage, V
V
Each SLIC needs an isolation diode from the V
Figure 13 and Figure 14 show how the TISPPBLx limits overvoltages. The TISPPBLx thyristor sections limit
negative overvoltages and the diode sections limit positive overvoltages.
Negative overvoltages (Figure 13) are initially clipped close to the SLIC negative supply rail value (V
conduction of the transistor base-emitter and the thyristor gate-cathode junctions. If sufficient current is
available from the overvoltage, then the thyristor will crowbar into a low voltage ground referenced on-state
condition. As the overvoltage subsides the high holding current of the crowbar thyristor prevents d.c. latchup.
The negative protection voltage will be the sum of the gate supply (V
voltage (V
buffer in the TISPPBLx greatly reduces the gate positive current (from about 50 mA to 1 mA) and introduces a
negative gate current. Figure 1 shows that the TISPPBLx gate current depends on the current being
The following SLIC circuit definitions are used in this data sheet:
V
V
The isolation diode, D1 in Figure 13, is to prevent a damaging current flowing into the SLIC substrate (V
pin) if the V
0.001
1
t
(BR)
BAT
Bat
B
Bat
, t
50 devices tested from 10 wafer lots
I
T
F
= V
A
FR
— Package pin label for the battery supply voltage.
— Voltage applied to the V
— Negative power supply voltage applied to the V
= 20 A, I
= 25°C, V
for V
(2) @ 0 µs
DIODE t
- Breakdown and Forward Recovery Times - µs
CUMULATIVE POPULATION %
Outliers
B
0.004
+ 0.7.
GK(BO)
F
> 5 V
Bat
T
= -20 A, 0.5/700 Waveform
FR
GG
0.01
voltage becomes more negative than the V
LIMITING TIME
= -50 V
). Under a.c. overvoltage conditions V
Figure 11
vs
0.04
GG
0.1
, of the TISPPBLx. When the isolation diode, D1, is conducting, then
THYRISTOR t
for V
BAT
APPLICATIONS INFORMATION
TYPICAL CHARACTERISTICS
pin.
(BR)
< V
0.4
TC6XAC
GG
(BR)
1
B
voltage supply.
GK(BO)
BAT
P R O D U C T
B
1.10
1.05
1.00
0.95
0.90
pin via an isolation diode. This voltage is also the
supply during a negative overvoltage condition.
will be less than 3 V. The integrated transistor
-40 -30 -20 -10 0
NORMALISED PEAK LIMITING VOLTAGES
Normalised to 25°C values
of V
I
0.5/700 Waveform
V
F
GG
= 20 A, I
THYRISTOR
Specifications are subject to change without notice.
(BO)
= -50 V
B
DIODE
) and the peak gate(terminal)-cathode
JUNCTION TEMPERATURE
V
V
and V
FRM
(BO)
T
J
T
- Junction Temperature - °C
AUGUST 1997 - REVISED AUGUST 2002
= -20 A
FRM
Figure 12
10 20 30 40 50 60 70 80
I N F O R M A T I O N
vs
B
) by the
TC6XAA
BAT