MCR8DSMT4 ON Semiconductor, MCR8DSMT4 Datasheet - Page 2

• Manufacturer Part Number: MCR8DSMT4
• Description: SCRs 600V 8A
• Manufacturer: ON Semiconductor

Specifications of MCR8DSMT4

• Breakover Current Ibo Max: 90 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 18 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R
4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
5. R
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR8DSMT4
MCR8DSMT4G
MCR8DSNT4
MCR8DSNT4G
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Reverse Gate Blocking Voltage (I
Peak Reverse Gate Blocking Current (V
Peak Forward On−State Voltage (Note 4) (I
Gate Trigger Current (Continuous dc) (Note 5)
Gate Trigger Voltage (Continuous dc) (Note 5)
Holding Current
Latching Current
Total Turn−On Time
Critical Rate of Rise of Off−State Voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(V
(V
(V
(V
(V
(Source Voltage = 12 V, R
(V
(V
R
GK
GK
AK
D
D
D
D
D
D
current not included in measurements.
= 12 V, R
= 12 V, R
= 12 V, Initiating Current = 200 mA, R
= 12 V, I
= Rated V
= 0.67 X Rated V
= 1.0 kW, T
= Rated V
G
L
L
DRM
= 2.0 mA, R
= 100 W)
= 100 W)
DRM
J
= 110°C)
Device
, Rise Time = 20 ns, Pulse Width = 10 ms)
or V
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
DRM
RRM
, Exponential Waveform,
S
GK
= 6.0 kW, I
; R
= 1 kW)
Characteristics
Characteristic
GK
= 1.0 kW) (Note 3)
GR
GR
(T
T
J
= 16 A(pk), R
= 10 mA)
TM
= 10 V)
= 25°C unless otherwise noted)
GK
GK
= 16 A)
= 1 kW)
= 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
GK
http://onsemi.com
= 1.0 kW)
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
= 25°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
(Pb−Free)
(Pb−Free)
Package
DPAK
DPAK
DPAK
DPAK
2
Symbol
Symbol
V
R
I
I
I
dv/dt
R
R
V
V
DRM
RRM
RGM
I
GRM
tgt
T
GT
I
qJC
qJA
qJA
I
TM
GT
H
L
L
0.45
2500 / Tape & Reel
Min
5.0
0.2
0.5
0.5
2.0
10
−
−
−
−
−
−
−
−
−
Shipping
Max
12.5
0.65
260
Typ
2.2
1.4
1.0
1.0
2.0
88
80
12
10
−
−
−
−
−
−
−
−
†
Max
500
200
300
1.2
1.8
1.0
1.5
6.0
6.0
5.0
10
18
10
10
−
−
°C/W
V/ms
Unit
Unit
mA
mA
°C
mA
mA
mA
ms
V
V
V