TISP4350L3AJR Bourns Inc., TISP4350L3AJR Datasheet - Page 2
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TISP4350L3AJR
Manufacturer Part Number
TISP4350L3AJR
Description
Sidacs
Manufacturer
Bourns Inc.
Datasheet
1.TISP4015L1BJR-S.pdf
(11 pages)
Specifications of TISP4350L3AJR
Mounting Style
SMD/SMT
Package / Case
DO-214AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TISP4350L3AJR-S
Manufacturer:
BOURNS
Quantity:
240 000
Repetitive peak off-state voltage
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current (see Notes 1 and 2)
Initial rate of rise of current (2/10 waveshape)
Maximum junction temperature
Storage temperature range
NOTES: 1. Initially, the device must be in thermal equilibrium with T
I
V
V
I
I
I
Electrical Characteristics, T A = 25
DRM
(BO)
D
H
Absolute Maximum Ratings, T A = 25
(BO)
(BO)
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
2/10 µs (T elcordia GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, comb ination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (T elcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2 s 50 Hz/60 Hz a.c.
1000 s 50 Hz/60 Hz a.c.
Repetitive peak off-
state current
Breakover voltage
Impulse breakover
voltage
Breakover current
Off-state current
Holding current
2. The surge may be repeated after the device returns to its initial conditions.
Parameter
V
di/dt = ±0.8 A/ms
dv/dt = ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±5 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
di/dt = ±0.8 A/ms
V
V
V
I
T
D
D
D
D
= ±5 A, di/dt = +/-30 mA/ms
= V
= ± 6 V
= ± 13 V
= ± 22 V
°
DRM
C (Unless Otherwise Noted)
°
C (Unless Otherwise Noted)
Rating
Test Conditions
J
= 25 °C.
Customers should verify actual device performance in their specific applications.
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
Symbol
Specifications are subject to change without notice.
V
I
di/d t
I
T
T
TSM
DRM
TSP
stg
JM
Min
±50
AUGUST 1999 - REVISED JANUARY 2007
Typ
-65 to +150
Value
± 150
± 120
± 25
± 65
± 45
± 45
± 35
± 30
±15
130
150
1.8
±8
20
22
13
5
Max
±0.8
±15
±30
±40
±34
±50
±63
±5
±2
A/µs
Unit
Unit
mA
µA
µA
°C
°C
V
A
A
V
V
A