TISP4350T3BJR Bourns Inc., TISP4350T3BJR Datasheet - Page 2

• Manufacturer Part Number: TISP4350T3BJR
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP4350T3BJR

• Breakover Current Ibo Max: 30 A
• Rated Repetitive Off-state Voltage Vdrm: 275 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a
plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
NOVEMBER 1997 - REVISED JANUARY 2007
Description
Absolute Maximum Ratings, T A = 25 °C (Unless Otherwise Noted)
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
TISP4xxxH4BJ Overvoltage Protector Series
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K .20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
2. Initially, the TISP4xxxH4BJ must be in thermal equilibrium with T
3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Rating
J
= 25 °C.
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
Symbol
V
di
I
I
T
TSM
DRM
TSP
T
T
stg
/dt
J
-40 to +150
-65 to +150
Value
±135
±145
±155
±200
±230
±275
500
300
250
220
200
200
200
160
100
400
2.1
55
60
Unit
A/µs
°C
°C
A
A
V