MAC4DSM-001 ON Semiconductor, MAC4DSM-001 Datasheet

Triacs THY 4A 600V TRIAC

MAC4DSM-001

Manufacturer Part Number
MAC4DSM-001
Description
Triacs THY 4A 600V TRIAC
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC4DSM-001

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
40 A
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Gate Trigger Voltage (vgt)
1.3 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.6 V @ 6 A
Mounting Style
SMD/SMT
Package / Case
TO-252-3 through-hole (DPAK)
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC4DSM-001
Manufacturer:
ON
Quantity:
18 000
MAC4DSM, MAC4DSN
Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
January, 2009 − Rev. 6
Peak Repetitive Off−State Voltage
On−State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Consideration
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On−State Current Rating of 4.0 Amperes RMS at 108 C
Low IGT − 10 mA Maximum in 3 Quadrants
High Immunity to dv/dt − 50 V/ms at 125 C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2009
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(Note 1) (T
Wave, 50 to 60 Hz, Gate Open)
(Full Cycle Sine Wave, 60 Hz,
T
(One Full Cycle Sine Wave, 60 Hz,
T
(t = 8.3 msec)
(Pulse Width
(t = 8.3 msec, T
(Pulse Width
(Pulse Width
DRM
C
J
= 125 C)
= 108 C)
and V
J
RRM
= −40 to 125 C, Sine
Rating
Machine Model, C u 400 V
10 msec, T
20 msec, T
20 msec, T
C
for all types can be applied on a continuous basis. Blocking
= 108 C)
(T
J
= 25 C unless otherwise noted)
MAC4DSM
MAC4DSN
C
C
C
Preferred Device
= 108 C)
= 108 C)
= 108 C)
Symbol
I
P
V
V
T(RMS)
I
P
V
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
GM
stg
2
J
t
−40 to 125
−40 to 150
Value
600
800
4.0
6.6
2.0
1.0
4.0
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 2
1
2
3
3
1
2
3
4
Y
WW
AC4DSx
G
MT2
ORDERING INFORMATION
4.0 AMPERES RMS
4
4
600 − 800 VOLTS
PIN ASSIGNMENT
http://onsemi.com
CASE 369C
CASE 369D
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= Device Code
= Pb−Free Package
x= M or N
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
DIAGRAMS
G
MARKING
MAC4DSM/D
MT1
4DSxG
YWW
AC
4DSxG
YWW
AC

Related parts for MAC4DSM-001

MAC4DSM-001 Summary of contents

Page 1

... MAC4DSM, MAC4DSN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On− ...

Page 2

... Duty Cycle ORDERING INFORMATION Device MAC4DSM−001 MAC4DSM−001G MAC4DSMT4 MAC4DSMT4G MAC4DSN−001 MAC4DSN−001G MAC4DSNT4 MAC4DSNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off−State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off−State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On−State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

CONDUCTION ANGLE 105 0 0.5 1.0 1.5 2.0 2 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 1. RMS Current Derating 100 TYPICAL @ MAXIMUM @ ...

Page 5

MT2 NEGATIVE 8.0 6.0 MT2 POSITIVE 4.0 2.0 0 -50 - JUNCTION TEMPERATURE ( C) J Figure 7. Typical Holding Current versus Junction Temperature 1000 800 600 V = 400 V 400 ...

Page 6

V = 400 V 600 PK 400 600 V 200 800 V 0 100 105 110 115 T , JUNCTION TEMPERATURE ( C) J Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) 100 10 V 1.0 0 ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− SEATING PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 ...

Page 8

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MAC4DSM/D ...

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