TISP4165M3AJR Bourns Inc., TISP4165M3AJR Datasheet - Page 2

Sidacs

TISP4165M3AJR

Manufacturer Part Number
TISP4165M3AJR
Description
Sidacs
Manufacturer
Bourns Inc.
Datasheet

Specifications of TISP4165M3AJR

Breakover Current Ibo Max
24 A
Rated Repetitive Off-state Voltage Vdrm
135 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Forward Voltage Drop
3 V
Mounting Style
SMD/SMT
Package / Case
DO-214AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TISP4165M3AJR-S
Manufacturer:
PULSE
Quantity:
2 300
Part Number:
TISP4165M3AJR-S
Manufacturer:
BOURNS
Quantity:
240 000
The TISP4xxxM3AJ range consists of twenty voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMAJ (JEDEC DO-214AC with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents, the 100 A 10/1000 TISP4xxxH3BJ series in the SMB
(JEDEC DO-214AA) package is available.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
Junction temperature
Storage temperature range
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
Description (continued)
Absolute Maximum Ratings, T A = 25
TISP4xxxM3AJ Overvoltage Protector Series
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K.20/21/45, K.44 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
2. Initially, the TISP4xxxM3AJ must be in thermal equilibrium with T
3. The surge may be repeated after the TISP4xxxM3AJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 ° C.
Rating
°
C (Unless Otherwise Noted)
J
= 25 °C.
Customers should verify actual device performance in their specific applications.
‘4070
‘4080
‘4090
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4320
‘4350
‘4360
‘4395
Symbol
di
V
I
I
T
TSM
TSP
DRM
T
T
stg
/dt
J
Specifications are subject to change without notice.
-40 to +150
-65 to +150
AUGUST 2001 - REVISED JANUARY 2007
Value
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±240
±275
±290
±320
± 58
± 65
± 68
± 75
± 90
300
110
100
100
100
300
220
120
1.6
23
24
75
50
Unit
A/µs
°C
°C
V
A
A

Related parts for TISP4165M3AJR