MMT10B350T3 ON Semiconductor, MMT10B350T3 Datasheet
MMT10B350T3
Specifications of MMT10B350T3
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MMT10B350T3 Summary of contents
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... High Surge Current Capability: 100 Amps 10 x 1000 msec, for Controlled Temperature Environments • The MMT10B350T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. • ...
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... V Breakdown Voltage BR V Breakover Voltage BO I Breakover Current BO I Holding Current State Voltage TM MMT10B350T3 (T = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply 1.0 kW 25°C) J Voltage Current Characteristic of TSPD (Bidirectional Device) http://onsemi.com 2 Symbol Max T − 125 ...
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... Peak 100 Value Half Value TIME (ms) Figure 5. Exponential Decay Pulse Waveform MMT10B350T3 400 390 380 370 360 350 340 330 320 80 100 120 140 −60 −40 −20 Figure 2. Typical Breakdown Voltage versus 600 ...
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... MMT10B350T3 TIP GND OUTSIDE PLANT RING PPTC* TIP GND OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE GND PLANT RING HEAT COIL http://onsemi.com TELECOM EQUIPMENT TELECOM EQUIPMENT TELECOM EQUIPMENT 4 ...
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... H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30 K 0.030 0.050 0.76 1.27 P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMT10B350T3/D ...