DSSK80-006B IXYS, DSSK80-006B Datasheet - Page 2

• Manufacturer Part Number: DSSK80-006B
• Description: DIODE SCHOTTKY 60V 40A TO-247AD
• Manufacturer: IXYS

Specifications of DSSK80-006B

• Voltage - Forward (vf) (max) @ If: 550mV @ 40A
• Current - Reverse Leakage @ Vr: 20mA @ 60V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247AD
• Vrrm, (v): 60
• Ifavm, D = 0.5, Total, (a): 80
• Ifavm, D = 0.5, Per Diode, (a): 40
• @ Tc, (°c): 120
• Vf, Max, Tvj =125°c, (v): 0.51
• @ If, (a): 40
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.80
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, Conditions and dimensions.
© 2006 IXYS All rights reserved
Z
I
F
I
thJC
F(AV)
K/W
100
0.1
10
A
80
70
60
50
40
30
20
10
Fig. 1 Maximum forward voltage
Fig. 4 Average forward current I
Fig. 6 Transient thermal impedance junction to case at various duty cycles
0.001
A
1
1
0
0.0
0
0.33
0.17
D = 0.5
0.08
0.25
drop characteristics
versus case temperature T
0.2
40
Single Pulse
0.4
80
d = 0.5
T
150°C
125°C
VJ
25°C
T
=
C
V
120
0.6
F
0.01
DC
°C
V
160
0.8
F(AV)
C
10000
P
I
R
1000
(AV)
0.01
Fig. 2 Typ. value of reverse current I
Fig. 5 Forward power loss characteristics
100
0.1
mA
10
50
40
30
20
10
W
1
0
0
0
100°C
T
125°C
50°C
25°C
75°C
VJ
versus reverse voltage V
=150°C
10
10
0.1
20
20
30
s
30
40
I
F(AV)
40
t
50
V
R
DSSK 80-006B
50
60
d =
DC
0.5
0.33
0.25
0.17
0.08
R
V
A
60
70
1
R
10000
I
FSM
C
1000
T
100
Fig. 3 Typ. junction capacitance C
Note: All curves are per diode
pF
A
0
versus reverse voltage V
10
DSSK 80-006B
20
30
40
V
T
t
R
P
VJ
50
= 25°C
s
V
2 - 2
R
60
T