TISP3082-S Bourns Inc., TISP3082-S Datasheet - Page 2

• Manufacturer Part Number: TISP3082-S
• Description: Sidacs PROTECTOR DUAL SYMMETRICAL
• Manufacturer: Bourns Inc.

Specifications of TISP3082-S

• Breakover Current Ibo Max: 10 A
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 3 V
• Mounting Style: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings, T
Electrical Characteristics for R and T Terminal Pair, T
I
I
C
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
Repetitive peak off-state voltage, 0 °C < T
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current, 0 °C < T
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
DRM
D
off
TISP3xxxF3 (HV) Overvoltage Protector Series
Repetitive peak off-
state current
Off-state current
Off-state capacitance
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
5. Further details on capacitance are given in the Applications Information section.
2. Initially, the TISP
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Parameter
connected to the guard terminal of the bridge.
returns to its initial conditions.
®
device m ust be in thermal equilibrium with 0 °C < T
V
V
f = 100 kHz, V
(see Notes 4 and 5)
A
Third terminal voltage = -50 V to +50 V
D
D
= 25 °C (Unless Otherwise Noted)
= ±2V
= ±50 V
A
DRM
< 70 °C
Rating
A
, 0 °C < T
< 70 °C (see Notes 1 and 3)
d
= 100 mV , V
A
< 70 °C
A
Test Conditions
= 25 °C (Unless Otherwise Noted)
D
= 0,
Customers should verify actual device performance in their specific applications.
J
<70 °C. The surge may be repeated after the TISP
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
Symbol
I
di
V
Specifications are subject to change without notice.
PPSM
I
T
TSM
DRM
T
T
stg
/dt
J
Min
MARCH 1994 - REVISED SEPTEMBER 2008
0.05
Typ
-65 to +150
-65 to +150
Value
±180
±200
±220
±240
±270
350
175
120
250
4.3
90
38
50
35
60
55
50
45
Max
0.15
±10
±10
Unit
A/µs
Unit
µA
µA
pF
°C
°C
®
A
A
V
device