C2D20120D Cree Inc, C2D20120D Datasheet - Page 2

• Manufacturer Part Number: C2D20120D
• Description: DIODE SCHOTTKY 1200V 22A TO-247
• Manufacturer: Cree Inc

Specifications of C2D20120D

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.8V @ 10A
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Current - Average Rectified (io) (per Diode): 22A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 0ns
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 20A
• Forward Voltage Vf Max: 3V
• Forward Surge Current Ifsm Max: 250A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1.
Typical Performance (Per Leg)
Electrical Characteristics (Per Leg)
Thermal Characteristics
2
Symbol
Symbol
**
Per Leg,
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
V
I
C
0
20
18
16
14
12
10
θJC
R
F
C
8
6
4
2
0
C2D20120D Rev. F
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Thermal Resistance from Junction
to Case
Figure 1. Forward Characteristics
1.0 2.0 3.0 4.0 5.0
*
Both Legs
Parameter
0.48
0.24
Typ.
1000
Typ.
1.6
2.5
10
20
61
80
59
**
*
Max.
Max.
1000
200
1.8
3.0
200
180
160
140
120
100
80
60
40
20
0
0
°C/W
Unit
Unit
μA
nC
pF
V
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
MHz
V
MHz
F
F
R
R
R
J
R
R
R
500
= 10 A T
= 10 A T
= 1200 V, I
= 0 V, T
= 200 V, T
= 400 V, T
= 25°C
= 1200 V T
= 1200 V T
Test Conditions
Test Conditions
J
= 25°C, f = 1 MHz
J
J
=25°C
=175°C
J
J
= 25˚C, f = 1
= 25˚C, f = 1
1000
F
J
J
=25°C
=175°C
= 10A
1500
Note
Note
2000