900PE20 Ruttonsha, 900PE20 Datasheet - Page 2

• Manufacturer Part Number: 900PE20
• Description: SCR Modules 960 Amp 200 Volt
• Manufacturer: Ruttonsha

Specifications of 900PE20

• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AB
• Forward Voltage Drop: 1.6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL SPECIFICATION
VOLTAGE RATINGS
ON-STATE CONDUCTION
SWITCHING
I
I
I
I
I
V
V
r
r
V
I
I
di/dt
t
t
T(AV)
T(RMS)
TSM
2
H
L
d
q
t1
t2
Type Number
t
2
T(TO)1
T(TO)2
TM
t
900PE
Parameter
Max. average on-state current
@ heat sink temperature
Max. RMS on-state current
Max. peak one cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on state
slope resistance
High level value of on state
slope resistance
Max. on state voltage
Maximum holding current
Latching current
Parameter
Max. non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
2
t for fusing
2
Voltage
t for fusing
Code
20
40
60
SILICON CONTROLLED RECTIFIERS
V
RRM
/ V
and off-state voltage
DRM
, max. repetitive peak
200
400
600
V
960(440)
900PE
900PE
55(75)
12600
15000
11300
1900
1130
1000
1000
0.85
0.88
0.25
0.24
1.60
800
100
600
1.0
900PE
k A
Units
Units
kA
A/
m
mA
µ
0
A
A
V
V
C
µ
Ω
s
2
2
s
s
s
V
Conditions
180
double side (single side) cooled
@25
t = 10ms
t = 10ms
t = 10ms
t = 10ms
t = 0.1 to 10ms. No voltage reapplied.
(16.7% x
(
(16.7% x
(
I
T
Conditions
Gate drive 20V, 20
T
Gate current 1A, di
V
I
dv/dt = 20V/
RSM
π
π
pk
TM
J
J
d
x I
x I
= 3000A, T
= 25
= 125
= 0.67% V
= 550A, T
, max. non-repetitive
0
0
peak voltage
conduction, half sine wave
C heat sink temperature (double side cooled)
F(AV)
F(AV)
0
C, anode supply 12V resistive load
0
C, anode voltage
π
< I < 20 x
< I < 20 x
π
300
500
700
V
x I
x I
µ
J
DRM
J
s, Gate 0V 100
F(AV)
F(AV)
No voltage
reapplied
100%V
reapplied
No voltage
reapplied
100%V
reapplied
= 125
= 125
, T
< I <
<
Ω
J
g
/dt = 1A/
π
π
, tr
= 25
0
Ι < π
0
C, di/dt = 40A/
C, t
RRM
RRM
x I
x I
≤ 1 µ
π
F(AV)
F(AV)
0
p
C
x I
x I
= 10ms sine pulse
≤
), T
) T
µ
s
F(AV)
F(AV)
80% V
Sinusodial half wave,
Initial T
Ω
s
, t
J
J
), T
), T
= T
p
= T
= 500
DRM
I
J
J
µ
J
DRM
J
J
= T
s, V
= T
max.
= T
max.
@ 125
/ I
J
µ
J
J
R
mA
s
RRM
50
max.
max.
max.
= 50V
0
max.
C
2