TIC236D-S Bourns Inc., TIC236D-S Datasheet

TIC236D-S

Manufacturer Part Number

TIC236D-S

Description

Triacs 400V 12A TRIAC

Manufacturer

Bourns Inc.

Datasheet

1.TIC236N-S.pdf (3 pages)

Specifications of TIC236D-S

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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absolute maximum ratings over operating case temperature (unless otherwise noted)

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

electrical characteristics at 25°C case temperature (unless otherwise noted )

† All voltages are with respect to Main Terminal 1.

NOTE

DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Repetitive peak off-state voltage (see Note 1)

Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)

Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)

Peak gate current

Operating case temperature range

Storage temperature range

Lead temperature 1.6 mm from case for 10 seconds

DRM

●

R O D U C T

High Current Triacs

12 A RMS

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge

4: This parameter must be measured using pulse techniques, t

PARAMETER

Repetitive peak

off-state current

Gate trigger

current

Gate trigger

voltage

On-state voltage

the rate of 300 mA/°C.

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

the current carrying contacts are located within 3.2 mm from the device body.

of 50 mA (Quadrants 1 - 3)

I N F O R M A T I O N

supply

= Rated V

= ±17 A

= +12 V†

= -12 V†

= +12 V†

= -12 V†

RATING

DRM

TEST CONDITIONS

= 0

= 50 mA

= 10 Ω

= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

MT2

MT1

Pin 2 is in electrical contact with the mounting base.

(see Note 4)

p(g)

TIC236M

TIC236D

TIC236S

TIC236N

= 110°C

> 20 µs

TO-220 PACKAGE

(TOP VIEW)

SYMBOL

T(RMS)

TSM

DRM

stg

MIN

SILICON TRIACS

TYP

±1.4

-0.8

-40 to +110

-40 to +125

-19

-16

0.8

0.9

TIC236 SERIES

VALUE

400

600

700

800

100

230

±1

MAX

±2.1

-50

±2

-2

MDC2ACA

UNIT

°C

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TIC236D-S Summary of contents

Page 1

... This parameter must be measured using pulse techniques, t the current carrying contacts are located within 3.2 mm from the device body DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MT1 MT2 G Pin electrical contact with the mounting base. RATING TIC236D TIC236M TIC236S TIC236N TEST CONDITIONS DRM Ω ...

Page 2

... Rated V D di/dt on -state current di / mA/µs G † All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: = 100 Ω µ ≤ kHz p(g) r thermal characteristics ...

Page 3

... Case Temperature - °C C Figure DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TYPICAL CHARACTERISTICS TC08AD 1000 100 100 100 120 -60 -40 TIC236 SERIES SILICON TRIACS LATCHING CURRENT vs CASE TEMPERATURE TC08AE I supply GTM + - V = ± - 100 120 T - Case Temperature - °C C Figure 4. ...

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