TISP61512P-S Bourns Inc., TISP61512P-S Datasheet - Page 2

• Manufacturer Part Number: TISP61512P-S
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP61512P-S

• Breakover Current Ibo Max: 5 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 4 V
• Mounting Style: Through Hole
• Package / Case: PDIP-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Repetitive peak off-state voltage, V
Repetitive peak gate-cathode voltage, V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state curr ent, 50 Hz (see Notes 1 and 2)
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
Junction temperatur e
Storage temperature range
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ T
NOTE
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Characteristics, T J = 25
V
V
V
GK(BO)
C
FRM
(BO)
V
V
I
D
G
T
F
TISP61511D Gated Protectors
10/1000 µs
5/310 µs
0.2/310 µs
1/20 µs
2/10 µs
full-sine-wave, 20 ms
1 s
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
3: All tests have C
Gate decoupling capacitor
Off-state current
Breakover voltage
Gate-cathode voltage
at breakover
On-state voltage
Forward voltage
Peak forward recovery
voltage
Parameter
to its initial conditions. See the applications section for the details of the impulse generators.
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature.
the R or T terminal. See the applications section for the details of the impulse generators.
G
= 220 nF and V
GK
V
I
I
I
I
I
I
I
I
I
T
T
F
F
T
T
T
I
T
T
D
T
I
T
= 0.5 A, t
= 3 A, t
= 5 A, t
= 30 A, 10/1000 µs, 1 kV, R
= 30 A, 10/700 µs, 1.5 kV, R
= 30 A, 1.2/50 µs, 1.5 kV, R
= 38 A, 2/10 µs, 2.5 kV, R
= 30 A, 10/700 µs, 1.5 kV, R
= 0, - 40 °C ≤ T
= 30 A, 1.2/50 µs, 1.5 kV, R
= 30 A, 10/1000 µs, 1 kV, R
= -85 V, V
°
= 38 A, 2/10 µs, 2.5 kV, R
KA
C (Unless Otherwise Noted)
= 0, - 40 °C ≤ T
Rating
w
w
Component
GG
w
= 500 µs
= 500 µs
GK
= 500 µs
= -48 V. R
= 0
J
≤ 85 °C
J
S
≤ 85 °C
is the current limiting resistor between the output of the impulse generator and
Test Conditions
S
= 61 Ω, di/ dt
S
S
S
S
S
= 61 Ω, di/ dt
S
S
= 10 Ω, di/dt
= 10 Ω, di/dt
= 33 Ω, di/dt
= 10 Ω, di/dt
= 10 Ω, di/ dt
= 33 Ω, di/dt
(i)
(i)
T
J
(i)
= 40 A/µs (see Note 3)
Customers should verify actual device performance in their specific applications.
(i)
(i)
(i)
(i)
(i)
J
≤ 85 °C. The surge may be repeated after the device returns
= 40 A/µs (see Note 3)
= 70 A/µs (see Note 3)
= 8 A/µs (see Note 3)
= 70 A/µs (see Note 3)
= 14 A/µs (see Note 3)
= 25 °C, 85 °C
= 14 A/µs (see Note 3)
= 8 A/µs (see Note 3)
T
J
= -40 °C
T
T
J
J
= 25 °C
= 70 °C
Symbol
Specifications are subject to change without notice.
V
V
I
I
GKRM
I
GSM
T
TSM
DRM
TSP
T
stg
J
Min
Min
Typ
220
Typ
-55 to +150
-55 to +150
JULY 1995 — REVISED JULY 2008
Value
-100
120
170
-85
3.5
30
40
40
90
5
2
Max
Max
-58
50
10
20
25
12
5
3
4
3
5
5
7
Unit
Unit
Unit
nF
µA
µA
°C
°C
V
V
V
V
V
V
A
A
A
V