TISP4265H4BJR-S Bourns Inc., TISP4265H4BJR-S Datasheet - Page 2

• Manufacturer Part Number: TISP4265H4BJR-S
• Description: Sidacs PROTECTOR - SINGLE BIDIRECTIONAL
• Manufacturer: Bourns Inc.

Specifications of TISP4265H4BJR-S

• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings, T A = 25
Repetitive peak off-state voltage
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current (see Notes 1 and 2)
Initial rate of rise of current (2/10 waveshape)
Junction temperature
Storage temperature range
NOTES: 1. Initially the device must be in thermal equilibrium with T
Electrical Characteristics, T A = 25
I
V
V
I
V
I
I
DRM
(BO)
D
H
(BO)
(BO)
T
TISP40xxH1BJ VLV Overvoltage Protector Series
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (I EC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/310 µs (I TU-T K.20/45/21, 10/700 µs voltage wave shape)
5/320 µs (F CC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2 s 50 Hz/60 Hz a.c.
1000 s 50 Hz/60 Hz a.c.
Repetitive peak off-
state current
Breakover voltage
Impulse breakover
voltage
Breakover current
On-state voltage
O
Holding current
2. The surge may be repeated after the device returns to its initial conditions.
ff-state current
Parameter
I
di/dt = ±0.8 A/ms
di/dt = ±0.8 A/ms
V
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±12 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I = ±5 A, t
V
V
V
T
T
D
D
D
D
= ±5 A, di/dt = -/+30 mA/ms
= V
= ± 6 V
= ± 13 V
= ± 22 V
°
C (Unless Otherwise Noted)
DRM
°
C (Unless Otherwise Noted)
Rating
w
= 100 µs
Test Conditions
J
= 25 °C.
Customers should verify actual device performance in their specific applications.
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
Symbol
Specifications are subject to change without notice.
V
di/dt
I
I
T
T
TSM
DRM
TSP
stg
J
Min
±50
AUGUST 1999 - REVISED JANUARY 2007
Typ
-65 to +150
-40 to +150
Value
± 500
± 400
± 200
± 150
± 150
± 125
± 100
± 25
450
±15
±8
45
50
21
7
2
Max
±0.8
±15
±30
±40
±33
±57
±74
±5
±2
±3
Unit
m A
A/µs
Unit
°C
µA
µA
°C
A
V
V
A
A
V
V