DA227TL Rohm Semiconductor, DA227TL Datasheet
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Manufacturer Part Number
DA227TL
Description
DIODE SWITCH 80V 100MA SOT-343
Manufacturer
Rohm Semiconductor
Specifications of DA227TL
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Forward Current If(av)
100mA
Repetitive Reverse Voltage Vrrm Max
80V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Operating
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
100 mA
Max Surge Current
4 A
Configuration
Dual Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Maximum Power Dissipation
150 mW
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DA227TLTR
Available stocks
Diodes
Switching diode
DA227
Ultra high speed switching
1) Small mold type. (UMD4)
2) High reliability.
Silicon epitaxial planar
R
Reverse voltage (DC)
P
A
S
P
Ju
S
F
Reverse current
Ca
Reverse recovery time
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
orward voltage
eak reverse voltage (single)
verage rectified forward current (single)
urge current (t=1us)
ower dissipation
torage temperature
everse voltage (repetitive peak)
nction temperature
pacitance between terminals
Parameter
Parameter
Symbol
V
Ct
trr
I
R
F
External dimensions (Unit : mm)
0.25±
Taping specifications(Unit : mm)
(3)
(4)
0.65
0.1
0.05
2.0±0.2
1.3±0.1
Min.
Each lead has same dimension
各リードとも
Symbol
-
-
-
-
2.2±0.1
同寸法
4.0±0.1
0.65
I
Tstg
V
surge
I
V
Pd
Io
Tj
FM
RM
R
(1)
Typ.
2.0±0.05
(2)
dot (year week factory)
-
-
-
-
JEITA : SC-82
JEITA : SC-82
JEDEC : SOT-343
JEDEC : SOT-343
ROHM : UMD4
1Pin Mark
4.0±0.1
Max.
0.15±0.05
1.2
0.1
3.5
-55 to +150
0.9±0.1
4
0.7
Limits
φ1.55±0.05
300
100
150
150
80
80
4
0~0.1
Unit
µA
pF
ns
V
φ1.1±0.1
I
V
V
V
F
R
R
R
=100mA
Land size figure (Unit : mm)
Structure
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
mW
Unit
mA
mA
℃
℃
V
V
A
UMD4
Conditions
0.7
Rev.A
0.05
1.3
0.3±0.1
1.15±0.1
0.6
DA227
1/2
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DA227TL Summary of contents
Diodes Switching diode DA227 Applications Ultra high speed switching Features 1) Small mold type. (UMD4) 2) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter R everse voltage (repetitive peak) Reverse voltage (DC) P eak reverse voltage (single) ...
Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ Ta=25℃ 10 Ta=150℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 910 AVE:921.7mV 900 VF ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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