RB425DT146 Rohm Semiconductor, RB425DT146 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Arrays RB425DT146
Manufacturer Part Number
RB425DT146
Description
DIODE SCHOTTKY 40V 0.1A SOT-346
Manufacturer
Rohm Semiconductor
Specifications of RB425DT146
Diode Configuration
1 Pair Common Cathode
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
550mV @ 100mA
Current - Reverse Leakage @ Vr
30µA @ 10V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
40V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
100mA
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
1A
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.1 A
Max Surge Current
1 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
30 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB425DT146TR
Available stocks
Low current rectification
1) Small mold type. (SMD3)
2) Low I
3) High reliability.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward voltage (*1)
Forward current surge peak (60Hz ・ 1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Forward voltage
Reverse current
Capacitance between terminals
RB425D
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Shottky barrier diode
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R
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
V
I
V
V
Ct1
I
V
FSM
Io
Tj
R
RM
F
F
R
1
1
2
3.2±0.1
4.0±0.1
Dimensions (Unit : mm)
Min.
-
-
-
-
40 to 125
2.0±0.05
0.4
－0.05
1/3
＋0.1
Limits
(2)
0.95
100
125
40
40
Typ.
2.9±0.2
1
Each lead has same dimension
1.9±0.2
各リードとも
6
-
-
-
同寸法
(3)
0.95
4.0±0.1
Max.
0.55
0.34
(1)
30
-
φ1.5±0.1
0
JEDEC :S0T-346
JEITA : SC-59
ROHM : SMD3
week code
0.15
1.1±0.2
Unit
Unit
1.1
mA
0.8± 0.1
μA
°C
°C
pF
＋0.1
－0.06
V
V
A
V
V
0.2
0.1
0.01
φ1.05MIN
0～0.1
I
I
V
V
F
F
=100mA
=10mA
R
R
=10V
=10V , f=1MHz
Structure
Land size figure (Unit : mm)
SMD3
0.8MIN.
Data Sheet
Conditions
0.95
1.9
2011.03 - Rev.C
0.3±0.1
1.35±0.1
Related parts for RB425DT146
RB425DT146 Summary of contents
Shottky barrier diode RB425D Applications Low current rectification Features 1) Small mold type. (SMD3) 2) Low High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward ...
RB425D 100 Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 470 Ta=25℃ D1 IF=100mA 460 n=30pcs 450 440 430 AVE:439.5mV 420 VF DISPERSION MAP 10 Ta=25℃ 9 f=1MHz 8 VR=10V ...
RB425D 0.1 Per chip 0.08 DC D=1/2 0.06 Sin(θ＝180) 0.04 0. 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.3 Per chip 0A 0. D=t/T 0.2 DC VR=15V Tj=125℃ T 0.15 D=1/2 0.1 0.05 Sin(θ＝180 ...
ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...
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