VSKTF200-08HKP Vishay, VSKTF200-08HKP Datasheet - Page 2
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VSKTF200-08HKP
Manufacturer Part Number
VSKTF200-08HKP
Description
SCR Modules 200 Amp 800 Volt 444 Amp IT(RMS)
Manufacturer
Vishay
Datasheet
1.VSKLF200-12HJ.pdf
(10 pages)
Specifications of VSKTF200-08HKP
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Holding Current (ih Max)
6000 mA
Mounting Style
Screw
Package / Case
MAGN-A-PAK
Breakover Current Ibo Max
8000 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
VSK.F200..P Series
Vishay Semiconductors
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
2500 Hz
5000 Hz
10 000 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive on-state,
surge current
Maximum I
Maximum I
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
2
2
t for fusing
t for fusing
r
d
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Fast Thyristor/Diode and Thyristor/Thyristor
SYMBOL
380
460
310
250
180
50
50
85
V
V
I
T(RMS)
(MAGN-A-PAK Power Modules), 200 A
I
I
T(TO)1
T(TO)2
V
T(AV)
I
TSM
I
2
r
r
180° el
I
I
2
TM
80 % V
t1
t2
t
H
L
t
10/0.47
DRM
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x I
T
(I > x I
(16.7 % x x I
T
(I > x I
I
T
T
pk
J
J
J
J
560
690
450
360
280
= T
= T
= 25 °C, I
= 25 °C, V
= 600 A, T
50
50
60
I
TM
J
J
maximum
maximum
T(AV)
T(AV)
T
< I < x I
< I < x I
A
J
> 30 A
T(AV)
T(AV)
= 12 V, Ra = 6 , I
= T
TEST CONDITIONS
630
710
530
410
300
50
85
J
-
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
< I < x I
< I < x I
maximum, t
80 % V
180° el
T(AV)
T(AV)
10/0.47
), T
), T
RRM
RRM
DiodesEurope@vishay.com
DRM
T(AV)
T(AV)
J
J
= T
= T
1060
p
850
760
560
410
I
50
60
TM
),
),
-
= 10 ms sine pulse
g
J
J
= 1A
maximum
maximum
Sinusoidal
half wave,
initial T
J
= 125 °C
2460
1570
630
410
50
85
-
-
80 % V
100 µs
10/0.47
DRM
Document Number: 94422
VALUES
7600
8000
6400
6700
2900
1000
3180
2080
1.18
1.25
0.74
0.70
1.73
200
444
290
265
205
187
600
860
560
I
50
60
85
TM
-
-
Revision: 19-Jul-10
UNITS
UNITS
kA
/μF
A/μs
kA
m
mA
°C
°C
A
V
A
A
V
V
2
2
s
s