DAN217T146 Rohm Semiconductor, DAN217T146 Datasheet - Page 2

• Manufacturer Part Number: DAN217T146
• Description: DIODE SWITCH 80V 100MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DAN217T146

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Forward Current If(av): 100mA
• Repetitive Reverse Voltage Vrrm Max: 80V
• Forward Voltage Vf Max: 1.2V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Diode Case: RoHS Compliant
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 100 mA
• Max Surge Current: 300 mA
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Diode Case Style: TO-236
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DAN217T146TR

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DAN217
100
100
950
940
930
920
910
900
0.1
20
15
10
10
10
5
0
1
1
0.1
0 100 200 300 400 500 600 700 800 900 100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
Ta=150℃
VF-IF CHARACTERISTICS
Ta=125℃
VF DISPERSION MAP
IFSM DISRESION MAP
1
AVE:921.7mV
TIME:t(ms)
AVE:3.50A
Ta=75℃
Ifsm
Ifsm
10
8.3ms
IF=100mA
Ta=25℃
n=30pcs
t
Ta=-25℃
1cyc
Ta=25℃
100
0
10000
1000
1000
0.01
100
100
100
0.1
10
90
80
70
60
50
40
30
20
10
10
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0.001
0
10
0.01
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
20
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:9.655nA
30
TIME:t(s)
Mounted on epoxy board
IM=100mA
AVE:1.93ns
ｶﾞﾗｽｴﾎﾟｷｼ基板実装時
IM=1mA
40
1ms
1
2/2
300us
1ms
Ta=150℃
300us
50
time
10
time
IF=10A
60
Ta=25℃
n=10pcs
RL=50Ω
VR=80V
Ta=25℃
n=10pcs
IF=5mA
VR=6V
Ta=-25℃
IF=10mA
Ta=75℃
Ta=25℃
100
Ta=125℃
70
1000
80
0.1
10
10
10
9
8
7
6
5
4
3
2
1
0
1
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
0
1
IFSM-CYCLE CHARACTERISTICS
AVE:0.97kV
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
ESD DISPERSION MAP
5
C=200pF
Ct DISPERSION MAP
NUMBER OF CYCLES
R=0Ω
AVE:1.17pF
Ifsm
10
10
8.3ms
AVE:2.54kV
C=100pF
R=1.5kΩ
1cyc
15
8.3ms
Ta=25℃
VR=6V
f=1MHz
n=10pcs
f=1MHz
2011.03 - Rev.C
100
20
Data Sheet