MAC8D ON Semiconductor, MAC8D Datasheet

Triacs THY 8A 400V TRIAC

MAC8D

Manufacturer Part Number
MAC8D
Description
Triacs THY 8A 400V TRIAC
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC8D

Rated Repetitive Off-state Voltage Vdrm
400 V
Breakover Current Ibo Max
80 A
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
35 mA
Holding Current (ih Max)
40 mA
Forward Voltage Drop
1.6 V @ 11 A
Mounting Style
Through Hole
Package / Case
TO-220-3
Repetitive Peak Forward Blocking Voltage
400 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC8D
Manufacturer:
ON
Quantity:
5 000
Part Number:
MAC8D
Manufacturer:
ON Semiconductor
Quantity:
401
MAC8D, MAC8M, MAC8N
Triacs
Silicon Bidirectional Thyristors
where high noise immunity and high commutating di/dt are required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
*For additional information on our Pb-Free strategy and soldering details, please
MAXIMUM RATINGS
April, 2007 - Rev. 6
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off- State Voltage
(T
50 to 60 Hz, Gate Open)
On‐State RMS Current,
(Full Cycle Sine Wave, 60 Hz, T
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, T
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width
Average Gate Power
(t = 8.3 ms, T
Operating Junction Temperature Range
Storage Temperature Range
Designed for high performance full‐wave ac control applications
Blocking Voltage to 800 Volts
On‐State Current Rating of 8.0 Amperes RMS at 100 C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dv/dt - 250 V/ms minimum at 125 C
Minimizes Snubber Networks for Protection
Industry Standard TO‐220AB Package
High Commutating di/dt - 6.5 A/ms minimum at 125 C
Pb-Free Packages are Available*
Semiconductor Components Industries, LLC, 2007
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
DRM
= -40 to 125 C, Sine Wave,
and V
J
= 125 C)
C
Characteristic
RRM
1.0 ms, T
= 80 C)
for all types can be applied on a continuous basis. Blocking
C
(T
= 80 C)
J
= 25 C unless otherwise noted)
Preferred Device
C
,
= 100 C)
(Note 1)
MAC8M
MAC8D
MAC8N
Symbol
I
P
V
V
T(RMS)
I
P
T
TSM
G(AV)
DRM,
RRM
I
T
GM
stg
2
J
t
- 40 to +125
- 40 to +150
Value
0.35
400
600
800
8.0
80
26
16
1
Unit
A
W
W
V
A
A
C
C
2
s
MAC8D
MAC8DG
MAC8M
MAC8MG
MAC8N
MAC8NG
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
1
2
3
4
MT2
ORDERING INFORMATION
400 thru 800 VOLTS
x
A
Y
WW
G
8 AMPERES RMS
http://onsemi.com
PIN ASSIGNMENT
CASE 221A-09
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb-Free Package
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
(Pb-Free)
(Pb-Free)
(Pb-Free)
Package
STYLE 4
TRIACS
Main Terminal 1
Main Terminal 2
Main Terminal 2
Publication Order Number:
Gate
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MAC8xG
AYWW
Shipping
MT1
MAC8D/D

Related parts for MAC8D

MAC8D Summary of contents

Page 1

... MAC8D, MAC8M, MAC8N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 Volts On‐State Current Rating of 8.0 Amperes RMS at 100 C Uniform Gate Trigger Currents in Three Quadrants ...

Page 2

... DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current See Figure 10.(V Commutating dv/ V/ms,Gate Open, T Critical Rate of Rise of Off‐State Voltage (V Gate Open 125 Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle MAC8D, MAC8M, MAC8N ( unless otherwise noted; Electricals apply in both directions Gate Open DRM ...

Page 3

... Quadrant II (-) I GATE Quadrant III (-) I GATE All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. MAC8D, MAC8M, MAC8N (Bidirectional Device) on state RRM RRM Quadrant 3 MainTerminal 2 - Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) ...

Page 4

... I , RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 1. RMS Current Derating 100 TYPICAL MAXIMUM @ T 10 MAXIMUM @ 0.1 0 0.5 1 1 INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) T Figure 3. On‐State Characteristics MAC8D, MAC8M, MAC8N Figure 2. On‐State Power Dissipation 1 = 125 C J 0.1 0.01 0 3.5 4 4.5 5 ...

Page 5

... Voltage (Exponential) 200 V RMS ADJUST FOR TRIGGER CHARGE Note: Component values are for verification of rated (di/dt) Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) MAC8D, MAC8M, MAC8N 1 0.95 0.9 0.85 0.8 075 0.7 0.65 0.6 0.55 0.5 ...

Page 6

... PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com MAC8D, MAC8M, MAC8N PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE SEATING -T- ...

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