BAT85 AMO NXP Semiconductors, BAT85 AMO Datasheet - Page 4

• Manufacturer Part Number: BAT85 AMO
• Description: Schottky (Diodes & Rectifiers) DIODE SCHOTTKY
• Manufacturer: NXP Semiconductors

Specifications of BAT85 AMO

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A @ Ta=50C
• Max Surge Current: 5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: Through Hole
• Package / Case: DO-34
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT85,133

NXP Semiconductors
GRAPHICAL DATA
2000 May 25
handbook, halfpage
handbook, halfpage
I F(AV)
Schottky barrier diode
(nA)
(mA)
I R
(1) T
(2) T
(3) T
Fig.4
10
10
10
10
10
250
200
150
100
10
50
amb
amb
amb
1
−1
5
4
3
2
0
0
0
= 85 °C.
= 25 °C.
= −40 °C.
Reverse current as a function of reverse
voltage; typical values.
Fig.2 Derating curve.
(3)
(1)
(2)
50
10
100
20
T
amb
V R (V)
MRA540
( C)
o
MGC682
150
30
4
handbook, halfpage
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
f = 1 MHz.
Fig.5
(mA)
(pF)
C d
10
I F
10
10
12
10
−1
amb
amb
amb
8
4
0
1
3
2
0
0
(1)
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
(2) (3)
0.4
10
(1) (2) (3)
0.8
20
Product data sheet
V R (V)
V F (V)
MGC681
MLD358
BAT85
1.2
30