MBR6045PT ON Semiconductor, MBR6045PT Datasheet - Page 2

• Manufacturer Part Number: MBR6045PT
• Description: Schottky (Diodes & Rectifiers) 60A 45V
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR6045PT

• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 60 A
• Max Surge Current: 500 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.75 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: SOT-93
• Voltage - Forward (vf) (max) @ If: 620mV @ 30A
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 45V
• Reverse Recovery Time (trr): -
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current,
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature (Forward Current Applied)
Voltage Rate of Change
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 2)
Instantaneous Reverse Current (Note 2)
1000
0.01
100
0.1
10
(Rated V
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
(i
(i
(i
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 125°C)
1
F
F
F
0
= 30 Amps, T
= 30 Amps, Tj = 125°C)
= 60 Amps, Tj = 25°C)
R
, T
R
, Square Wave, 20 kHz @ T
C
10
Figure 1. Typical Reverse Current
= 125°C)
j
= 25°C)
V
R
, REVERSE VOLTAGE (VOLTS)
Characteristic
Characteristic
20
T
T
T
C
C
Per Device
C
Per Diode
= 150°C
= 100°C
= 25°C
TYPICAL ELECTRICAL CHARACTERISTICS
30
C
Rating
= 90°C) Per Diode
40
http://onsemi.com
MBR6045PT
50
2
100
10
1
Min. Pad
Min. Pad
Symbol
100
v
i
Conditions
150°C
R
F
200
v
Figure 2. Typical Forward Voltage
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Min
100°C
−
−
−
−
−
300
D
/dT
T
Symbol
Symbol
Typical
C
V
400
V
T
I
J
I
dv/dt
R
R
I
I
0.55
0.51
0.70
= 25°C
F(AV)
FRM
RRM
T
RWM
FSM
0.2
RRM
V
J(pk)
T
35
< 1/R
qJC
qJA
stg
R
J
qJA
500
.
−65 to +175
−65 to +175
10,000
Max
Max
Max
0.62
0.55
0.75
500
175
2.0
1.0
1.0
45
30
60
60
60
50
600
700
°C/W
Unit
V/ms
Unit
Unit
mA
°C
°C
°C
V
A
A
A
A
V
800