MBR20H150CT-E3/45 Vishay, MBR20H150CT-E3/45 Datasheet - Page 3

DIODE SCHOTTKY DUAL 150V TO220AB

MBR20H150CT-E3/45

Manufacturer Part Number
MBR20H150CT-E3/45
Description
DIODE SCHOTTKY DUAL 150V TO220AB
Manufacturer
Vishay
Datasheet

Specifications of MBR20H150CT-E3/45

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
900mV @ 10A
Current - Reverse Leakage @ Vr
5µA @ 150V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
150V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
150 V
Forward Continuous Current
20 A
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.99 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
150V
Forward Current If(av)
10A
Forward Voltage Vf Max
750mV
Forward Surge Current Ifsm Max
200A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
MBR20H150CT-E3/45GI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR20H150CT-E3/45
Manufacturer:
Vishay/General Semiconductor
Quantity:
1 915
Part Number:
MBR20H150CT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 88864
Revision: 18-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.1
10
0.2
T
T
Percent of Rated Peak Reverse Voltage (%)
20
J
J
= 125 °C
= 175 °C
0.3
Instantaneous Forward Voltage (V)
T
30
J
= 175 °C
0.4
40
0.5
T
J
= 125 °C
50
0.6
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
0.7
60
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
T
0.8
J
T
= 75 °C
70
J
= 25 °C
0.9
T
J
T
= 75 °C
80
J
1.0
= 25 °C
90
1.1 1.2
100
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
MBR, MBRB
1
MBRF
10
10
www.vishay.com
100
100
3

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