MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 12
MM908E625ACDWB
Manufacturer Part Number
MM908E625ACDWB
Description
IC QUAD HALF BRDG MCU/LIN 54SOIC
Manufacturer
Freescale Semiconductor
Datasheets
1.MM908E625.pdf
(48 pages)
2.MM908E625ACDWB.pdf
(48 pages)
3.MM908E625ACDWB.pdf
(48 pages)
4.MM908E625ACDWB.pdf
(48 pages)
5.MM908E625ACDWB.pdf
(40 pages)
Specifications of MM908E625ACDWB
Applications
Automotive Mirror Control
Core Processor
HC08
Program Memory Type
FLASH (16 kB)
Controller Series
908E
Ram Size
512 x 8
Interface
SCI, SPI
Number Of I /o
13
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (0.300", 7.50mm Width) Exposed Pad
Program Memory Size
16 KB
Number Of Programmable I/os
54
Number Of Timers
16
Operating Supply Voltage
- 18 V to + 28 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MM908E625ACDWB
Manufacturer:
FREESCALE Semiconductor
Quantity:
26
12
908E625
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
0.8 V
0.8 VSUP
0.2 VSUP
0.2 V
∆t Fall-time
LIN
TXD
LIN
RXD
TXD
Rx
Tx
SUP
SUP
SR
Recessive State
t
F
TXD-LIN-low
t
=
Tx-LIN-low
t
LIN-RXD-low
t
0.4 V
0.4 VSUP
LIN-Rx-low
∆t Fall-time
∆V Fall
SUP
Figure 5. LIN Slew Rate Description
Figure 4. LIN Timing Description
∆V Fall
TIMING DIAGRAMS
Dominant State
0.9 VSUP
0.9 V
t
Dominant State
TXD-LIN-high
t
Tx-LIN-high
SUP
0.1 V
0.1 VSUP
SUP
∆V Rise
SR
R
=
Recessive State
0.6 V
0.6 VSUP
∆t Rise-time
∆V Rise
Analog Integrated Circuit Device Data
SUP
t
∆t Rise-time
t
LIN-RXD-high
LIN-Rx-high
0.8 V
0.8 VSUP
0.2 V
0.2 VSUP
SUP
SUP
Freescale Semiconductor