MMSZ10ET1 ON Semiconductor, MMSZ10ET1 Datasheet - Page 4

• Manufacturer Part Number: MMSZ10ET1
• Description: DIODE ZENER 10V 500MW SOD-123
• Manufacturer: ON Semiconductor

Specifications of MMSZ10ET1

• Voltage - Zener (nom) (vz): 10V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (max) (zzt): 20 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Operating Temperature: -55°C ~ 150°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMSZ10ET1OS

ELECTRICAL CHARACTERISTICS
MMSZ39ET1
7. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. Z
* The “G” suffix indicates Pb−Free package available.
MMSZ27ET1, G
MMSZ30ET1
MMSZ33ET1
MMSZ36ET1
MMSZ43ET1, G
MMSZ47ET1
MMSZ51ET1
MMSZ56ET1
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
I
Z(AC)
ZT
Device
and Z
= 0.1 I
ZK
Z(DC),
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
with the AC frequency = 1 kHz.
Marking
Device
CN8
CN9
CP1
CP2
CP3
CP4
CP5
CP6
CP7
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
Min
(T
(Notes 7 and 8)
A
= 25°C unless otherwise noted, V
V
Nom
Z1
27
30
33
36
39
43
47
51
56
@ I
(V)
MMSZ2V4ET1 Series
ZT1
= 2 mA
http://onsemi.com
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
Max
4
(Note 9)
Z
130
150
170
180
200
80
80
80
90
ZT1
W
F
= 0.9 V Max. @ I
@ I
(Notes 7 and 8)
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
Min
25
ZT2
V
Z2
= 0.1 mA
(V)
Max
28.9
32
35
38
41
46
50
54
60
F
= 10 mA)
@ I
(Note 9)
0.5 mA
Z
300
300
325
350
350
375
375
400
425
ZT2
ZT2
W
=
Leakage Current
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
Max Reverse
mA
I
R
@ V
R
18.9
23.1
25.2
27.3
30.1
32.9
35.7
39.2
21
V