BZX84C12ET1 ON Semiconductor, BZX84C12ET1 Datasheet - Page 3

• Manufacturer Part Number: BZX84C12ET1
• Description: DIODE ZENER 12V 225MW SOT-23
• Manufacturer: ON Semiconductor

Specifications of BZX84C12ET1

• Voltage - Zener (nom) (vz): 12V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Power - Max: 225mW
• Impedance (max) (zzt): 25 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Operating Temperature: -65°C ~ 150°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Tolerance: -
• Other names: BZX84C12ET1OS

4. Zener voltage is measured with a pulse test current I
* The “G” suffix indicates Pb−Free package available.
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
BZX84C2V4ET1, G
BZX84C2V7ET1, G
BZX84C3V0ET1, G
BZX84C3V3ET1, G
BZX84C3V6ET1, G
BZX84C3V9ET1, G
BZX84C4V3ET1, G
BZX84C4V7ET1, G
BZX84C5V1ET1, G
BZX84C5V6ET1, G
BZX84C6V2ET1, G
BZX84C6V8ET1, G
BZX84C7V5ET1, G
BZX84C8V2ET1, G
BZX84C9V1ET1, G
BZX84C10ET1, G
BZX84C11ET1, G
BZX84C12ET1, G
BZX84C13ET1, G
BZX84C15ET1, G
BZX84C16ET1, G
BZX84C18ET1, G
BZX84C20ET1, G
BZX84C22ET1, G
BZX84C24ET1, G
BZX84C27ET1, G
BZX84C30ET1
BZX84C33ET1, G
BZX84C36ET1, G
BZX84C39ET1, G
BZX84C43ET1, G
BZX84C47ET1, G
BZX84C51ET1, G
BZX84C56ET1, G
BZX84C62ET1, G
BZX84C68ET1, G
BZX84C75ET1, G
Device*
Device
Marking
Marking
Device
Device
BA1
BA2
BA3
BA4
BA5
BA6
BA7
BA9
BB1
BB2
BB3
BB4
BB5
BB6
BB7
BB8
BB9
BC1
BC2
BC3
BC4
BC5
BC6
BC7
BC8
BC9
BD1
BD2
BD3
BD4
BK6
BD5
BD6
BD7
BD8
BD9
BE1
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
Min
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
28
31
34
37
40
44
48
52
58
64
70
@ I
@ I
V
ZT1
(Note 4)
Z1
ZT1
V
Nom
Nom
Z1
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
11
Below
= 5 mA
= 2 mA
(V)
Max
10.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
Max
28.9
11.6
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
32
35
38
41
46
50
54
60
66
72
79
A
@ I
Below
@ I
5 mA
2 mA
Z
Z
= 25°C unless otherwise noted, V
100
100
130
150
170
180
200
215
240
255
(W)
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
ZT1
ZT1
=
=
ZT1
ZT1
Z
at an ambient temperature of 25°C
http://onsemi.com
10.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
@ I
11.2
Min
V
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
25
@ I
(Note 4)
Z2
V
0.1 mA
Z2
ZT2
mA
Below
ZT2
(V)
Max
10.6
11.6
12.7
15.5
21.1
23.2
25.5
Max
28.9
= 1
2.1
2.4
2.7
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
14
17
19
32
35
38
41
46
50
54
60
66
72
79
=
3
0.5 mA
@ I
@ I
Below
1 mA
Z
Z
600
600
600
600
600
600
600
500
480
400
150
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
(W)
80
80
80
ZT2
ZT2
=
=
ZT2
ZT4
@ I
@ I
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Min
Min
2.6
3.0
3.3
3.6
3.9
4.1
4.4
4.5
5.0
5.2
5.8
6.4
7.0
7.7
8.5
9.4
V
ZT3
ZT3
(Note 4)
Z3
V
Z3
F
Below
=20 mA
= 10 mA
= 0.90 V Max. @ I
(V)
Max
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
73.2
80.2
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8.0
8.8
9.7
67
20 mA
@ I
10 mA
Below
I
Z
Z
ZT3
100
120
130
140
110
(W)
50
50
50
40
40
30
30
15
15
10
10
10
10
15
20
20
20
20
25
25
45
50
55
60
70
80
90
@
ZT3
ZT3
=
6
6
6
6
8
ZT3
=
mA
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
I
I
F
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
R
50
20
10
R
Leakage
Leakage
Reverse
Reverse
Current
Current
= 10 mA)
Max
Max
@
@
10.5
11.2
12.6
15.4
16.8
18.9
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
V
(V)
V
(V)
14
21
R
R
@ I
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
37.6
46.6
52.2
58.8
65.6
73.4
Min
Min
@ I
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
−2
42
(mV/k)
(mV/k)
Below
ZT1
q
q
ZT1
mA
VZ
VZ
=5 mA
Max
−2.5
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
= 2
10
11
13
14
16
18
20
22
0
0
0
0
0
0
C (pF)
V
1 MHz
C (pF)
1 MHz
@ V
R
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
105
100
110
= 0
f =
85
85
80
f =
70
70
70
70
45
40
40
40
40
35
35
35
@
= 0
R