DG508BEQ-T1-E3 Vishay, DG508BEQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: DG508BEQ-T1-E3
• Description: 8 Channel/Dual 4-Channel CMOS ANALOG MUX
• Manufacturer: Vishay
• Type: Analog Multiplexerr

Specifications of DG508BEQ-T1-E3

• Function: Multiplexer
• Circuit: 1 x 8:1
• On-state Resistance: 500 Ohm
• Voltage Supply Source: Dual Supply
• Voltage - Supply, Single/dual (±): ±5 V ~ 20 V
• Current - Supply: 0.5mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Number Of Channels: 1 Channel
• On Resistance (max): 500 Ohm @ 12 V
• On Time (max): 300 ns @ 12 V
• Off Time (max): 250 ns @ 12 V
• Supply Voltage (max): 44 V
• Supply Voltage (min): 12 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Bandwidth: 250 MHz
• Mounting Style: SMD/SMT
• Number Of Switches: Single
• Off Isolation (typ): - 81 dB
• Switch Current (typ): 0.01 mA @ +/- 15 V
• Package: 16TSSOP
• Maximum On Resistance: 500@12V Ohm
• Maximum Propagation Delay Bus To Bus: 300@±15V|400@12V ns
• Maximum High Level Output Current: 30 mA
• Multiplexer Architecture: 8:1
• Maximum Turn-off Time: 250@12V ns
• Maximum Turn-on Time: 300@12V ns
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG508BEQ-T1-E3TR

Notes:
a. Signals on S
b. All leads soldered or welded to PC board.
c. Derate 8.0 mW/°C above 70 °C.
d. Derate 5.6 mW/°C above 70 °C.
e. Derate 6.3 mW/°C above 70 °C.
f. Derate 6.6 mW/°C above 70 °C.
Document Number: 64821
S10-2817-Rev. D, 20-Dec-10
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced to V-
Digital Inputs
Current (Any terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)
Storage Temperature
Power Dissipation (Packages)
Thermal Resistance (
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
R
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
Logic High Input Current
Logic Low Input Current
Logic Input Capacitance
DS(on)
Matching
X
a
, V
, D
S
X
, V
or IN
D
e
J-A
X
e
)
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b
b
V
R
Symbol
R
ANALOG
I
I
I
V
V
DS(on)
S(off)
D(off)
D(on)
C
DS(on)
I
I
INH
INL
IH
IL
in
V+
GND
(EY, EQ, EJ, EN suffix)
16-Pin Narrow SOIC
16-Pin TSSOP
16-Pin PDIP
16-Pin miniQFN
16-Pin Narrow SOIC
16-Pin TSSOP
16-Pin PDIP
16-Pin miniQFN
V+ = 15 V, V- = - 15 V (± 10 %)
Unless Otherwise Specified
V
sequence each
S
V
V
V
V
V
S
switch on
D
= V
AX
D
e
e
EN
=
= ± 10 V
= ± 10 V, I
Test Conditions
V
V
, V
d
d
D
AX
AX
f
f
±
= 0 V
V
EN
=
f = 1 MHz
10 V
, V
, V
D
±
= ± 10 V
= 2.0 V, 0.8 V
c
c
EN
EN
10
= 2.0 V
= 0.8 V
S
= - 1 mA
DG508B
DG509B
DG508B
DG509B
a
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
or 20 mA, whichever occurs first
Typ.
180
10
4
c
(V-) - 2 to (V+) + 2
- 40 °C to 125 °C
Min.
- 100
- 100
- 65 to 150
- 15
- 50
- 50
- 50
2.0
- 1
- 1
- 1
- 1
- 1
- 1
- 1
159.6
Limit
100
600
450
510
525
125
178
152
d
44
25
30
DG508B, DG509B
Max.
100
100
380
480
0.8
15
50
50
50
1
1
1
1
1
1
1
d
Vishay Siliconix
- 40 °C to 85 °C
Min.
- 100
- 100
- 15
- 50
- 50
- 50
2.0
- 1
- 1
- 1
- 1
- 1
- 1
- 1
d
www.vishay.com
Max.
380
450
100
100
0.8
15
50
50
50
1
1
1
1
1
1
1
°C/W
Unit
d
mW
mA
°C
V
Unit
µA
nA
pF
V

V
3